Origin of yellow-band emission in epitaxially grown GaN nanowire arrays

ACS Applied Materials and Interfaces

Volumn 6, Issue 16, 2014, Pages 14159-14166

  Liu, Baodan ^a   Yuan, Fang ^a   Dierre, Benjamin ^b   Sekiguchi, Takashi ^b   Zhang, Song ^c   Xu, Yongkuan ^c   Jiang, Xin ^a  

^a INSTITUTE OF METAL RESEARCH   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION   (China)

Author keywords

epitaxial growth; GaN; interface; nanowire arrays; yellow band emission

Indexed keywords

EPITAXIAL GROWTH; III-V SEMICONDUCTORS; INTERFACES (MATERIALS); LUMINESCENCE; NANOWIRES; SAPPHIRE; WIDE BAND GAP SEMICONDUCTORS;

CRYSTAL QUALITIES; LUMINESCENCE PROPERTIES; NANOWIRE ARRAYS; RATIONAL SYNTHESIS; SAPPHIRE SUBSTRATES; SEMICONDUCTOR FILMS; VISIBLE EMISSIONS; YELLOW BANDS;

GALLIUM NITRIDE;

EID: 84906810081     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am5034878     Document Type: Article

References (39)

1. Ogino, T.; Aoki, M. Mechanism of Yellow Luminescence in GaN Jpn. J. Appl. Phys. 1980, 19, 2395-2405
2. Suski, T.; Perlin, P.; Teisseyre, H.; Leszczyński, M.; Grzegory, I.; Jun, J.; Boćkowski, M.; Porowski, S.; Moustakas, T. D. Mechanism of Yellow Luminescence in GaN Appl. Phys. Lett. 1995, 67, 2188-2190
3. Grazzi, C.; Strunk, H. P.; Castaldini, A.; Cavallini, A.; Schenk, H. P. D.; Gibart, P. Optoelectronic Properties of GaN Epilayers in the Region of Yellow Luminescence J. Appl. Phys. 2006, 100, 073711-1-4
4. Xu, S.; Hao, Y.; Zhang, J.; Jiang, T.; Yang, L.; Lu, X.; Lin, Z. Yellow Luminescence of Polar and Nonpolar GaN Nanowires on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition Nano Lett. 2013, 13, 3654-3657
5. Yuan, F.; Liu, B.; Wang, Z.; Yang, B.; Yin, Y.; Dierre, B.; Sekiguchi, T.; Zhang, G.; Jiang, X. Synthesis, Microstructure, and Cathodoluminescence of [0001]-Oriented GaN Nanorods Grown on Conductive Graphite Substrate ACS Appl. Mater. Interfaces 2013, 5, 12066-12072
6. Ponce, F. A.; Bour, D. P.; Gotz, W.; Wright, P. J. Spatial Distribution of the Luminescence in GaN Thin Films Appl. Phys. Lett. 1996, 68, 57-59
7. Tang, H.; Webb, J. B.; Bardwell, J. A.; Raymond, S.; Salzman, J.; Uzan-Saguy, C. Properties of Carbon-doped GaN Appl. Phys. Lett. 2001, 78, 757-759
8. Birkle, U.; Fehrer, M.; Kirchner, V.; Einfeldt, S.; Hommel, D.; Strauf, S.; Michler, P.; Gutowski, J. Studies on Carbon as Alternative P-type Dopant for Gallium Nitride MRS Internet J. Nitride Semicond. Res. 1999, 4 G5.6
9. Polyakov, A. Y.; Shin, M.; Freitas, J. A.; Skowronski, M.; Greve, D. W.; Wilson, R. G. On the Origin of Electrically Active Defects in AlGaN Alloys Grown by Organometallic Vapor Phase Epitaxy J. Appl. Phys. 1996, 80, 6349-6354
10. Seager, C. H.; Wright, A. F.; Yu, J.; Gotz, W. Role of Carbon in GaN J. Appl. Phys. 2002, 92, 6553-6560
11. Seager, C. H.; Tallant, D. R.; Yu, J.; Gotz, W. Luminescence in GaN Co-doped with Carbon and Silicon J. Lumin. 2004, 106, 115-124
12. Zhi, C. Y.; Zhong, D. Y.; Wang, E. G. GaN-filled Carbon Nanotubes: Synthesis and Photoluminescence Chem. Phys. Lett. 2003, 381, 715-719
13. Li, Q. M.; Wang, G. T. Spatial Distribution of Defect Luminescence in GaN Nanowires Nano Lett. 2010, 10, 1554-1558
14. Zhao, D. G.; Jiang, D. S.; Zhu, J. J.; Liu, Z. S.; Zhang, S. M.; Liang, J. W.; Li, X.; Li, X. Y.; Gong, H. M. Role of Edge Dislocations in Enhancing the Yellow Luminescence of n-type GaN Appl. Phys. Lett. 2006, 88, 241917-1-3
15. Chen, Z.; Cao, C. B.; Li, W. S.; Surya, C. Well-Aligned Single-Crystalline GaN Nanocolumns and Their Field Emission Properties Cryst. Growth Des. 2009, 9, 792-796
16. Cheng, Y. W.; Pan, K. M.; Chen, L. Y.; Ke, M. Y.; Chen, C. P.; Chen, C. Y.; Yang, C. C.; Huang, J. J. Characterizations of GaN-Based LEDs Encompassed With Self-Aligned Nanorod Arrays of Various Distribution Densities IEEE Electron Device Lett. 2009, 30, 1060-1062
17. Tang, Y. B.; Chen, Z. H.; Song, H. S.; Lee, C. S.; Cong, H. T.; Cheng, H. M.; Zhang, W. J.; Bello, I.; Lee, S. T. Vertically Aligned p-Type Single-Crystalline GaN Nanorod Arrays on n-Type Si for Heterojunction Photovoltaic Cells Nano Lett. 2008, 8, 4191-4195
18. Chen, C. Y.; Zhu, G.; Hu, Y. F.; Yu, J. W.; Song, J. H.; Cheng, K. Y.; Peng, L. H.; Chou, L. J.; Wang, Z. L. Gallium Nitride Nanowire Based Nanogenerators and Light-Emitting Diodes ACS Nano 2012, 6, 5687-5692
19. Liu, B. D.; Bando, Y.; Wang, M. S.; Tang, C. C.; Mitome, M.; Golberg, D. Crystallography and Elasticity of Individual GaN Nanotubes Nanotechnology 2009, 20, 185705-1-6
20. Li, S. F.; Waag, A. GaN Based Nanorods for Solid State Lighting J. Appl. Phys. 2012, 111, 071101-1-23
21. Huang, Y.; Duan, X. F.; Cui, Y.; Lieber, C. M. Gallium Nitride Nanowire Nanodevices Nano Lett. 2002, 2, 101-104
22. Zhong, Z. H.; Qian, F.; Wang, D. L.; Lieber, C. M. Synthesis of p-type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices Nano Lett. 2003, 3, 343-346
23. Qian, F.; Li, Y.; Gradecak, S.; Park, H. G.; Dong, Y. J.; Ding, Y.; Wang, Z. L.; Lieber, C. M. Multi-quantum-well Nanowire Heterostructures for Wavelength-controlled lasers Nat. Mater. 2008, 7, 701-706
24. Liu, B. D.; Bando, Y.; Tang, C. C.; Xu, F. F.; Golberg, D. Quasi-aligned Single-crystalline GaN Nanowire Arrays Appl. Phys. Lett. 2005, 87, 073106-1-3
25. Sekiguchi, T.; Yuan, X. L.; Niitsuma, J. Fabrication of UHV-SEM Equipped with Auger and Cathodoluminescence Systems and its Application to the Study of Semiconductor Nanostructures Scanning 2005, 27, 103-104
26. Popovici, G.; Kim, W.; Botchkarev, A.; Tang, H. P.; Morkoc, H.; Solomon, J. Impurity Contamination of GaN Epitaxial Films from the Sapphire, SiC and ZnO Substrates Appl. Phys. Lett. 1997, 71, 3385-3387
27. Liu, B.; Wang, Z.; Yuan, F.; Benjamin, D.; Sekiguchi, T.; Jiang, X. Crystallography and Cathodoluminescence of Pyramid-like GaN Nanorods Epitaxially Grown on a Sapphire Substrate RSC Adv. 2013, 3, 22914-22917
28. Kim, H. S.; Hwang, S. O.; Myung, Y.; Park, J.; Bae, S. Y.; Ahn, J. P. Three-dimensional Structure of Helical and Zigzagged Nanowires Using Electron Tomography Nano Lett. 2008, 8, 551-557
29. Chen, Y. S.; Shiao, W. Y.; Tang, T. Y.; Chang, W. M.; Liao, C. H.; Lin, C. H.; Shen, K. C.; Yang, C. C.; Hsu, M. C.; Yeh, J. H.; Hsu, T. C. Threading Dislocation Evolution in Patterned GaN Nanocolumn Growth and Coalescence Overgrowth J. Appl. Phys. 2009, 106, 023521-1-6
30. Ferdous, M. S.; Wang, X.; Fairchild, M. N.; Hersee, S. D. Effect of Threading Defects on InGaN/GaN Multiple Quantum Well Light Emitting Diodes Appl. Phys. Lett. 2007, 91, 231107-1-3
31. Nakamura, S. The Roles of Structural Imperfections in InGaN-Based Blue Light-emitting Diodes and Daser Diodes Science 1998, 281, 956-961
32. Bougrioua, Z.; Azize, M.; Lorenzini, P.; Laugt, M.; Haas, H. Some Benefits of Fe Doped Less Dislocated GaN Templates for AlGaN/GaN HEMTs Grown by MOVPE Phys. Status Solidi A 2005, 202, 536-544
33. Neugebauer, J.; Van de Walle, C. G. Gallium Vacancies and the Yellow Luminescence in GaN Appl. Phys. Lett. 1996, 69, 503-505
34. Reshchikov, M. A.; Morkoc, H. Luminescence Properties of Fefects in GaN J. Appl. Phys. 2005, 97, 061301-1-95
35. Moram, M. A.; Ghedia, C. S.; Rao, D. V. S.; Barnard, J. S.; Zhang, Y.; Kappers, M. J.; Humphreys, C. J. On the Origin of Threading Fislocations in GaN Films J. Appl. Phys. 2009, 106, 073513-1-9
36. Liu, B.; Hu, T.; Wang, Z.; Liu, L.; Qin, F.; Huang, N.; Jiang, X. Microstructure and Cathodoluminescence Study of GaN Nanowires Without/with P-doping Cryst. Res. Technol. 2012, 47, 207-212
37. Liu, B.; Hu, L.; Tang, C.; Liu, L.; Li, S.; Qi, J. Self-organized Formation and Optical Study of GaN Micropyramids Mater. Sci. Eng., B 2011, 176, 805-809
38. Smith, D. J.; Chandrasekhar, D.; Sverdlov, B.; Botchkarev, A.; Salvador, A.; Morkoc, H. Characterization of Structural Defects in Wurtzite Gan Grown on 6h Sic Using Plasma-Enhanced Molecular-Beam Epitaxy Appl. Phys. Lett. 1995, 67, 1830-1832
39. Oshima, Y.; Eri, T.; Shibata, M.; Sunakawa, H.; Usui, A. Fabrication of Freestanding GaN Wafers by Hydride Vapor-phase Epitaxy with Void-assisted Separation Phys. Status Solidi A 2002, 194, 554-558