Studies on carbon as alternative p-type dopant for gallium nitride

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Birkle, U ^a   Fehrer, M ^a   Kirchner, V ^a   Einfeldt, S ^a   Hommel, D ^a   Strauf, S ^a   Michler, P ^a   Gutowski, J ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; THIN FILMS;

BUFFER LAYERS; GROWTH MASK; PENDEO-EPITAXY; THIN FILM STRUCTURES;

HETEROJUNCTIONS;

EID: 3442885199     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002994     Document Type: Conference Paper

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