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Volumn 2, Issue , 2002, Pages 767-772

Noise spectroscopy of semiconductor materials and devices

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CARRIER TRANSPORT; SEMICONDUCTOR JUNCTIONS;

EID: 84906716906     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2002.1003370     Document Type: Conference Paper
Times cited : (8)

References (19)
  • 1
    • 0006703340 scopus 로고
    • Low frequency noise predicts when a transistor will fail
    • Van der Ziel and H. Tong, "Low frequency noise predicts when a transistor will fail ", Electronics,. 39 (24), pp. 95-97, 1966.
    • (1966) Electronics , vol.39 , Issue.24 , pp. 95-97
    • Van Der, Z.1    Tong, H.2
  • 2
    • 0020783347 scopus 로고
    • 1/f noise as a reliability estimation for solar cells
    • L. K. J. Vandamme, R. Alabedra and M. Zommiti, "1/f noise as a reliability estimation for solar cells ", Solid-State electron.,26, 67 1-674, 1983.
    • (1983) Solid-State Electron , vol.26 , Issue.67 , pp. 1-674
    • Vandamme, L.K.J.1    Alabedra, R.2    Zommiti, M.3
  • 3
    • 0006728990 scopus 로고
    • 1/f noise as a quality criterion for electronic devices and its measurement in automatic testing
    • M. Savelli, G. Lecoy, D. Dinet, J. Renard and D. Sauvage, "1/f noise as a quality criterion for electronic devices and its measurement in automatic testing ", AET Conf. Ses. 4, 1-27, 1984.
    • (1984) AET Conf. Ses , vol.4 , pp. 1-27
    • Savelli, M.1    Lecoy, G.2    Dinet, D.3    Renard, J.4    Sauvage, D.5
  • 4
    • 77957877063 scopus 로고
    • Lifetime dependence on 1/f noise of bipol ar transistors
    • (C. M van Vliet, ed.) World Scientific, Singapore
    • Konczakowska, "Lifetime dependence on 1/f noise of bipol ar transistors ", in Noise in Physical Systems (C. M van Vliet, ed.), p. 489, World Scientific, Singapore, 1987.
    • (1987) Noise in Physical Systems , pp. 489
    • Konczakowska1
  • 6
    • 77956987431 scopus 로고
    • Electrical noise as a measure of reliability in electronic devices
    • K. Jones, "Electrical noise as a measure of reliability in electronic devices ", Advances in Electronics and E lectron Physics, vol. 67, pp. 20 1-257, 1994.
    • (1994) Advances in Electronics and e Lectron Physics , vol.67 , Issue.1-257 , pp. 20
    • Jones, K.1
  • 7
    • 77957875786 scopus 로고
    • Noise as a diagnostic and prediction tool in reliability physics
    • M. M. Jevtic, "Noise as a diagnostic and prediction tool in reliability physics ", Microelectr. Reliab., 1994.
    • (1994) Microelectr. Reliab
    • Jevtic, M.M.1
  • 8
    • 84906676770 scopus 로고    scopus 로고
    • Non-destructive testing of silicon solar cell reliability
    • Z. Chobo la, "Non-destructive testing of silicon solar cell reliability ", Microelectronics Reliability, 2001.
    • (2001) Microelectronics Reliability
    • Chobola, Z.1
  • 12
    • 0035358930 scopus 로고    scopus 로고
    • Electron cyclotron resonance pl asma etching of n-sic and evaluation of ni/n-sic contacts by current noise measurements
    • Jun
    • N. Tanuma, S. Yasukawa, S. Yokokura, S. Haschiguchi, J. Sikula, I. Matsui, M. Tacano, Electron cyclotron resonance pl asma etching of n-SiC and evaluation of Ni/n-SiC contacts by current noise measurements, Jap. J. Appl. Phys. 40, (6A) 3979-3984 Jun 2001
    • (2001) Jap. J. Appl. Phys. , vol.40 , Issue.6 A , pp. 3979-3984
    • Tanuma, N.1    Yasukawa, S.2    Yokokura, S.3    Haschiguchi, S.4    Sikula, J.5    Matsui, I.6    Tacano, M.7
  • 18
    • 0031257014 scopus 로고    scopus 로고
    • Empirical model for the low-frequency noise of hot carrier degraded submicron ldd mosfet's
    • OCT
    • E. Simoen, P. Vasina, J. Sikula, C. Claeys, Empirical Model for the low-frequency noise of hot carrier degraded submicron LDD MOSFET's, TEEE Electron Device Letters, 18: (10) 480-482 OCT 1997
    • (1997) TEEE Electron Device Letters , vol.18 , Issue.10 , pp. 480-482
    • Simoen, E.1    Vasina, P.2    Sikula, J.3    Claeys, C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.