Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET's

IEEE Electron Device Letters

Volumn 18, Issue 10, 1997, Pages 480-482

  Simoen, E ^a   Vasina, P ^b   Sikula, J ^b   Claeys, C ^a  

^a IMEC   (Belgium)

^b BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; HOT CARRIERS; MATHEMATICAL MODELS; NUMERICAL METHODS; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

DRAIN CURRENT; HOT CARRIER DEGRADATION EFFECT; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0031257014     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.624921     Document Type: Article

References (14)

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