Electron cyclotron resonance plasma etching of n-SiC and evaluation of Ni/n-SiC contacts by current noise measurements

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 6 A, 2001, Pages 3979-3984

  Tanuma, Nobuhisa ^a   Yasukawa, Satoshi ^a   Yokokura, Saburo ^a   Hashiguchi, Sumihisa ^b   Sikula, Josef ^c   Matsui, Toshiaki ^d   Tacano, Munecazu ^a  

^a MEISEI UNIVERSITY   (Japan)

^b UNIVERSITY OF YAMANASHI   (Japan)

^c BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^d Communication Research Laboratory ^*  (Japan)

Author keywords

1 f current noise; ECR etching; Ohmic contacts; Planarization; SiC; Wide band gap semiconductor

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRON CYCLOTRON RESONANCE; ENERGY GAP; FINITE ELEMENT METHOD; OHMIC CONTACTS; PLASMA ETCHING; SURFACES; TEMPERATURE;

CURRENT NOISE MEASUREMENTS; PLANARIZATION; WIDE BAND GAP SEMICONDUCTOR;

SILICON CARBIDE;

EID: 0035358930     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3979     Document Type: Article

References (17)