Transport and noise properties of CdTe(Cl) crystals

Microelectronics Reliability

Volumn 41, Issue 3, 2001, Pages 431-436

  Schauer, P ^a   Sikula, J ^a   Moravec, P ^b  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^b CHARLES UNIVERSITY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTALS; CURRENT DENSITY; PHOTOCURRENTS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE; TRANSPORT PROPERTIES;

RECOMBINATION MODEL; TRAVELLING HEATER METHOD;

MICROELECTRONICS;

EID: 0035277805     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00200-6     Document Type: Article

References (9)

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9. Hooge F.N. 1/f noise is no surface effect Phys Lett A. 29:1969;139-140.