Generation of 1/f spectrum by relaxation process in thin film resistors

Quality and Reliability Engineering International

Volumn 14, Issue 2, 1998, Pages 69-71

  Hashiguchi, Sumihisa ^a,c,d   Yamagishi, Yutaka ^a   Fukuda, Toshiyuki ^a,e   Ohki, Makoto ^a,f   Šikula, Josef ^b,g,h   Vašina, Petr ^b  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^c UNIVERSITY OF TOKYO   (Japan)

^d Department of Electronics ^*  (Japan)

^e Research Laboratory   (Japan)

^f TOHOKU UNIVERSITY   (Japan)

^g CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^h Physics and Informatics   (Slovakia)

Author keywords

Noise; Reliability indicators; Thin film resistors

Indexed keywords

COMPUTER SIMULATION; RANDOM PROCESSES; RELIABILITY; SPECTRUM ANALYSIS; SPURIOUS SIGNAL NOISE; THIN FILM DEVICES; TIME SERIES ANALYSIS;

METALLIC THIN FILMS; THIN FILM RESISTORS;

RESISTORS;

EID: 0032028753     PISSN: 07488017     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-1638(199803/04)14:2<69::AID-QRE161>3.0.CO;2-4     Document Type: Article

References (2)

1. A. L. McWhorter, '1/f noise and related surface effects in germanium', Lincoln Laboratory Report 80, Boston MA, 1955; also in R. H. Kingston (ed.), Semiconductor Surface Physics, University of Philadelphia Press, Philadelphia, PA, 1957, p. 207.
2. A. L. McWhorter, '1/f noise and related surface effects in germanium', Lincoln Laboratory Report 80, Boston MA, 1955; also in R. H. Kingston (ed.), Semiconductor Surface Physics, University of Philadelphia Press, Philadelphia, PA, 1957, p. 207.