Near-infrared photoluminescence enhancement in Ge/CdS and Ge/ZnS core/shell nanocrystals: Utilizing IV/II-VI semiconductor epitaxy

ACS Nano

Volumn 8, Issue 8, 2014, Pages 8334-8343

  Guo, Yijun ^a,b   Rowland, Clare E ^c,d   Schaller, Richard D ^c,d   Vela, Javier ^a,b  

^a IOWA STATE UNIVERSITY   (United States)

^b IOWA STATE UNIVERSITY   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

^d NORTHWESTERN UNIVERSITY   (United States)

Author keywords

core shell nanocrystals; germanium; IV II VI epitaxy; near IR photoluminescence; quantum dots

Indexed keywords

CADMIUM SULFIDE; ELECTRON DIFFRACTION; ENERGY CONVERSION; ENERGY DISPERSIVE SPECTROSCOPY; ENERGY GAP; ETCHING; GERMANIUM; GRAPHENE QUANTUM DOTS; II-VI SEMICONDUCTORS; INFRARED DEVICES; IV-VI SEMICONDUCTORS; LATTICE MISMATCH; NANOCRYSTALLINE MATERIALS; NANOCRYSTALS; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SOLS; WIDE BAND GAP SEMICONDUCTORS; ZINC SULFIDE;

CORE/SHELL NANOCRYSTALS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; NEAR-INFRARED PHOTOLUMINESCENCE; NEAR-IR; PHOTOLUMINESCENCE QUANTUM YIELDS; POWDER X RAY DIFFRACTION; RADIATIVE RECOMBINATION; SELECTED AREA ELECTRON DIFFRACTION;

GERMANIUM METALLOGRAPHY;

EID: 84906693622     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn502792m     Document Type: Article

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