Mesoporous compound semiconductors from the reaction of metal ions with deltahedral [Ge9]4- clusters

Journal of the American Chemical Society

Volumn 130, Issue 34, 2008, Pages 11430-11436

  Armatas, Gerasimos S ^a   Kanatzidis, Mercouri G ^a,b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CHLORINE COMPOUNDS; GERMANIUM; METAL IONS; METALS; SEMICONDUCTING GERMANIUM COMPOUNDS; SURFACE ACTIVE AGENTS;

COMPOUND SEMICONDUCTORS; DIRECTED ASSEMBLY; MESOPOROUS; SEMICONDUCTING MATERIALS;

MESOPOROUS MATERIALS;

ANTIMONY; CADMIUM; GERMANIUM; INDIUM; LEAD; METAL ION; NITROGEN; SURFACTANT; TETRACYANOETHYLENE; TETRATHIAFULVALENE DERIVATIVE; TIN;

ARTICLE; BINDING SITE; CHEMICAL BOND; CHEMICAL REACTION; CHEMICAL STRUCTURE; DETOXIFICATION; ELECTRON; ENERGY; LIGHT; MATERIALS; POROSITY; SEMICONDUCTOR; SURFACE PROPERTY;

ADSORPTION; CATIONS; ELECTRON TRANSPORT; ETHYLENES; GERMANIUM; HETEROCYCLIC COMPOUNDS; LUMINESCENT MEASUREMENTS; METALS; NITRILES; PARTICLE SIZE; POROSITY; SEMICONDUCTORS; TEMPERATURE;

EID: 50249088130     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja802940w     Document Type: Article

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