Chemical vapor deposition of twisted bilayer and few-layer MoSe2 over SiOx substrates

Nanotechnology

Volumn 25, Issue 36, 2014, Pages

  Bachmatiuk, A ^a,b,c   Abelin, R F ^d   Quang, H T ^c   Trzebicka, B ^b   Eckert, J ^a,e,f   Rummeli, M H ^c  

^a IFW DRESDEN   (Germany)

^b CENTRE OF POLYMER AND CARBON MATERIALS   (Poland)

^c Sungkyunkwan University   (South Korea)

^d Sungkyunkwan University   (South Korea)

^e DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^f CENTER FOR ADVANCING ELECTRONICS DRESDEN CFAED   (Germany)

Author keywords

CVD; TEM; two dimensional dicalchogenide

Indexed keywords

MECHANICAL PROPERTIES; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY;

COMMERCIAL APPLICATIONS; FORMED MATERIALS; INNOVATIVE MATERIALS; RESEARCH GROUPS; THERMAL AND MECHANICAL PROPERTIES; TRANSITION METAL DICHALCOGENIDES; TWISTED BILAYERS;

CHEMICAL VAPOR DEPOSITION;

EID: 84906345245     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/25/36/365603     Document Type: Article

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