Graphene defect formation by extreme ultraviolet generated photoelectrons

Journal of Applied Physics

Volumn 116, Issue 5, 2014, Pages

  Gao, A ^a,b   Lee, C J ^a,b   Bijkerk, F ^a,b  

^a DUTCH INSTITUTE FOR FUNDAMENTAL ENERGY RESEARCH   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON; DEFECTS; IRRADIATION; PHOTOELECTRONS; PHOTONS; RADIATION; RAMAN SCATTERING;

DEFECT FORMATION; DOMINANT MECHANISM; E-BEAM IRRADIATION; EXTREME ULTRAVIOLET; EXTREME ULTRAVIOLETS; LOW ENERGY ELECTRONS; PRIMARY ELECTRONS; WATER PARTIAL PRESSURE;

GRAPHENE;

EID: 84905995850     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4892485     Document Type: Article

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