Extreme ultraviolet induced defects on few-layer graphene

Journal of Applied Physics

Volumn 114, Issue 4, 2013, Pages

  Gao, A ^a   Rizo, P J ^b   Zoethout, E ^a   Scaccabarozzi, L ^b   Lee, C J ^a   Banine, V ^b   Bijkerk, F ^a,c  

^a DUTCH INSTITUTE FOR FUNDAMENTAL ENERGY RESEARCH   (Netherlands)

^b ASML   (Netherlands)

^c UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON FRACTION; DENSITY OF DEFECTS; EXTREME ULTRAVIOLET; FEW-LAYER GRAPHENE; HYDROGEN PLASMAS; INDUCED DEFECTS; OXIDE FRACTIONS; REDUCING ENVIRONMENT;

DEFECTS; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

GRAPHENE;

EID: 84882313009     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4817082     Document Type: Article

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