Processing and evaluation of metal gate/high-κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-κ dielectric

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1635-1638

  Abermann, S ^a   Efavi, J K ^b   Sjoblom, G ^c   Lemme, M C ^b   Olsson, J ^c   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b AMO GMBH   (Germany)

^c UPPSALA UNIVERSITY   (Sweden)

Author keywords

HfO2; High ; Metal gate; MOCVD; Processing; ZrO2

Indexed keywords

GATE DIELECTRICS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; TITANIUM NITRIDE;

CURRENT-VOLTAGE CHARACTERISTICS; GAS ATMOSPHERE; METAL GATE;

MOS CAPACITORS;

EID: 34247633565     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.176     Document Type: Article

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