Molecular beam epitaxy of metamorphic InyGa1-yP solar cells on mixed anion GaAsx P1-x/GaAs graded buffers

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 3, 2011, Pages

  Tomasulo, Stephanie ^a   Simon, John ^a   Simmonds, Paul J ^a   Biagiotti, Jonathan ^a   Lee, Minjoo L ^a  

^a Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL GROWTH; EPITAXIAL GROWTH; GALLIUM ARSENIDE; GROWTH KINETICS; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURED MATERIALS; PHASE SEPARATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; TENSILE STRAIN;

FILM COMPOSITION; FLUX RATIO; GAAS; GRADED BUFFER; HIGH GROWTH TEMPERATURES; KINETIC GROWTH; LINEAR DEPENDENCE; MBE GROWTH; METAMORPHIC IN; MINORITY CARRIER; MIXED ANION; MORPHOLOGICAL DEFECTS; MULTI JUNCTION SOLAR CELLS; SMALL TEMPERATURE VARIATION; SOLID SOURCE MOLECULAR BEAM EPITAXY; SUBSTRATE TEMPERATURE; THREADING DISLOCATION DENSITIES;

GALLIUM ALLOYS;

EID: 84905935621     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3559119     Document Type: Article

References (32)

1. W. Guter, Appl. Phys. Lett. 0003-6951 94, 223504 (2009). 10.1063/1.3148341
2. D. C. Law, Sol. Energy Mater. Sol. Cells 0927-0248 94, 1314 (2010). 10.1016/j.solmat.2008.07.014
3. I. Tobías and A. Luque, Prog. Photovoltaics. 10, 323 (2002). 10.1002/pip.427 1062-7995
4. D. J. Aiken, A. B. Cornfeld, M. A. Stan, and P. R. Sharps, IEEE 4th Conference on Photovoltaic Energy Conversion (IEEE, New York, 2006), p. 838.
5. C. Amano, K. Ando, and M. Yamaguchi, J. Appl. Phys. 0021-8979 63, 2853 (1988). 10.1063/1.340938
6. C. T. Foxon, J. B. Clegg, K. Woodbridge, D. Hilton, P. Dawson, and P. Blood, J. Vac. Sci. Technol. B 1071-1023 3, 703 (1985). 10.1116/1.583119
7. T. Achtnich, G. Burri, and M. Ilegems, J. Vac. Sci. Technol. A 0734-2101 7, 2537 (1989). 10.1116/1.575793
8. Y. Yazawa, T. Kitatani, J. Minemura, K. Tamura, K. Mochizuki, and T. Warabisako, Sol. Energy Mater. Sol. Cells 0927-0248 35, 39 (1994). 10.1016/0927-0248(94)90120-1
9. M. J. Mori, S. T. Boles, and E. A. Fitzgerald, J. Vac. Sci. Technol. A 0734-2101 28, 182 (2010). 10.1116/1.3290762
10. M. A. Steiner, Proceedings of the 35th IEEE Photovoltaic Specialists Conference (IEEE, New York, 2010), p. 002111.
11. J. Simon, S. Tomasulo, P. Simmonds, M. Romero, and M. L. Lee, J. Appl. Phys. 0021-8979 109, 013708 (2011). 10.1063/1.3525599
12. B. W. Liang and C. W. Tu, J. Appl. Phys. 0021-8979 74, 255 (1993). 10.1063/1.354155
13. E. A. Fitzgerald, A. Y. Kim, M. T. Currie, T. A. Langdo, G. Taraschi, and M. T. Bulsara, Mater. Sci. Eng., B 0921-5107 67, 53 (1999). 10.1016/S0921-5107(99)00209-3 (Pubitemid 32082430)
14. R. Fischer, J. Klem, T. J. Drummond, R. E. Thorne, W. Kopp, H. Morkoc, and A. Y. Cho, J. Appl. Phys. 0021-8979 54, 2508 (1983). 10.1063/1.332317 (Pubitemid 13562983)
15. F. Cĺton, B. Sieber, A. Lefebvre, A. Bensaada, R. A. Masut, J. M. Bonard, J. D. Ganìre, and M. Ambri, J. Appl. Phys. 0021-8979 80, 827 (1996). 10.1063/1.362892
16. G. Wagner and P. Paufler, Phys. Status Solidi A 0031-8965 138, 389 (1993). 10.1002/pssa.2211380205
17. A. Ponchet, A. Le Corre, A. Godefroy, S. Salaün, and A. Poudoulec, J. Cryst. Growth 0022-0248 153, 71 (1995). 10.1016/0022-0248(95)00140-9
18. M. L. Lee, D. A. Antoniadis, and E. A. Fitzgerald, Thin Solid Films 0040-6090 508, 136 (2006). 10.1016/j.tsf.2005.07.328
19. S. W. Jun, T. Y. Seong, J. H. Lee, and B. Lee, Appl. Phys. Lett. 0003-6951 68, 3443 (1996). 10.1063/1.115787 (Pubitemid 126684325)
20. M. J. Mori and E. A. Fitzgerald, J. Appl. Phys. 0021-8979 105, 013107 (2009). 10.1063/1.3037240
21. T. S. Kuan, T. F. Kuech, W. I. Wang, and E. L. Wilkie, Phys. Rev. Lett. 0031-9007 54, 201 (1985). 10.1103/PhysRevLett.54.201
22. D. Doppalapudi, S. N. Basu, K. F. Ludwig, Jr., and T. D. Moustakas, J. Appl. Phys. 0021-8979 84, 1389 (1998). 10.1063/1.368251
23. T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori, Sol. Energy Mater. Sol. Cells 0927-0248 35, 25 (1994). 10.1016/0927-0248(94)90118-X
24. J. M. Woodall and H. J. Hovel, Appl. Phys. Lett. 0003-6951 21, 379 (1972). 10.1063/1.1654421
25. Z. Z. Sun, S. F. Yoon, and W. K. Loke, J. Cryst. Growth 0022-0248 235, 8 (2002). 10.1016/S0022-0248(01)01743-2 (Pubitemid 34070330)
26. W. Li, J. Lammasniemi, A. B. Kazantsev, R. Jaakkola, T. Makela, and M. Pessa, Electron. Lett. 0013-5194 34, 406 (1998). 10.1049/el:19980324
27. Y. Gu, Y. G. Zhang, H. Li, A. Z. Li, and C. Zhu, Mater. Sci. Eng., B 0921-5107 131, 49 (2006). 10.1016/j.mseb.2006.03.026
28. E. F. Schubert, Doping in III-V Semiconductors (Cambridge University Press, Cambridge, 1993). 10.1017/CBO9780511599828
29. J. Maguire, R. Murray, R. C. Newman, R. B. Beall, and J. J. Harris, Appl. Phys. Lett. 0003-6951 50, 516 (1987). 10.1063/1.98265
30. C. Domke, Ph. Ebert, M. Heinrich, and K. Urban, Phys. Rev. B 0556-2805 54, 10288 (1996). 10.1103/PhysRevB.54.10288
31. K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, Appl. Phys. Lett. 0003-6951 65, 989 (1994). 10.1063/1.112171
32. R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, Appl. Phys. Lett. 0003-6951 90, 183516 (2007). 10.1063/1.2734507 (Pubitemid 46701234)