2.0-2.1 eV GaxIn1-xP solar cells grown on relaxed GaAsP step grades

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 2111-2116

  Steiner, Myles A ^a   France, Ryan M ^a   Wanlass, Mark W ^a   Geisz, John F ^a   Olavarria, Waldo J ^a   Carapella, Jeffrey J ^a   Duda, Anna ^a   Romero, Manuel J ^a   Osterwald, Carl R ^a   Ciszek, Paul ^a   Kuciauskas, Darius ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BAND GAPS; CONTACT LAYERS; EFFICIENCY INCREASE; GAAS; GAAS SUBSTRATES; GRADED LAYERS; HIGH QUALITY; INSITU STRESS; INTERFACE RECOMBINATION VELOCITY; JUNCTION LAYERS; LATTICE-MISMATCHED; ORGANOMETALLIC VAPOR PHASE EPITAXY; RESIDUAL TENSILE STRESS; THREADING DISLOCATION DENSITIES;

ATMOSPHERIC PRESSURE; GALLIUM ARSENIDE; LATTICE CONSTANTS; ORGANOMETALLICS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM; SOLAR CELLS; SPACE APPLICATIONS;

GALLIUM ALLOYS;

EID: 78650164912     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616261     Document Type: Conference Paper

References (15)

1. D.C. Law et al., "Future technology pathways of terrestrial III-V multijunction solar cells for concentrator photovoltaic systems," Solar Energy Materials and Solar Cells 94, 2010, pp.1314-1318.
2. I. Tobias and A. Luque, "Ideal efficiency of monolithic, series-connected multijunction solar cells," Prog. Photovoltaics 10, 2001, pp.323-329.
3. J.F. Geisz et al., "40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions," Appl. Phys. Lett. 93, 2008, p.123505.
4. W. Guter et al., "Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight," Appl. Phys. Lett. 94, 2009, p.223504.
5. A. Barnett et al., "Very high efficiency solar cell modules," Prog. Photovoltaics 17, 2009, pp.75-83.
6. J.S. Yuan, C.C. Hsu, R.M. Cohen and G.B. Stringfellow, "Organometallic vapor phase epitaxial growth of AlGaInP," J. Appl. Phys. 57, 1985, pp.1380-1383.
7. T. Agui, T. Takamoto and M. Kaneiwa, "Investigation on AlInGaP solar cells for current matched multijunction cells," Third WCPEC, 2003, pp.670-672.
8. R.R. King et al., "40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells," Appl. Phys. Lett. 90, 2007, p.183516.
9. M.A. Steiner et al., "Lattice-mismatched 2.1-eV Ga0.67In0.33P solar cells grown on GaAs," submitted to Prog. Photovoltaics (2009).
10. 1-xP alloys," Phys. Rev. B 90, 2008, p.235202.
11. 1-xP alloys on relaxed GaAsP step grades," J. Appl. Phys. 106, 2009, p.063525.
12. eg. G.B. Stringfellow, "Thermodynamic aspects of organometallic vapor phase epitaxy," J. Crystal Growth 62, 1983, pp.225-229.
13. J.F. Geisz et al., "In situ stress measurement for MOVPE growth of high efficiency lattice-mismatched solar cells," J. Crystal Growth 310, 2008, pp.2339-2344.
14. M.W. Wanlass, K.A. Emery, M.M. Al-Jassim and A.R. Mason, "Effects of defect density and compositional grading on GaAsP photovoltaic performance," Nineteenth IEEE PVSC, 1987, pp.530-535.
15. For example, see M.J. Mori and E.A. Fitzgerald, "Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates," J. Appl. Phys. 105, 2009, p.013107.