SCOPUS 정보 검색 플랫폼

Volumn 235, Issue 1-4, 2002, Pages 8-14

Electrical properties of silicon- and beryllium-doped GaInP and (AlGa)InP grown by solid source molecular beam epitaxy

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B1. Phosphides; B2. Semiconducting aluminium compounds; B2. Semiconducting III V materials; B2. Semiconducting indium gallium phosphide

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; ELECTRON MOBILITY; HALL EFFECT; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; VOLTAGE MEASUREMENT;

PHOSPHORUS CRACKER CELLS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036467091 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01743-2 Document Type: Article

Times cited : (17)

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