Gas source MBE growth and doping characteristics of AlInP on GaAs

Materials Science and Engineering: B

Volumn 131, Issue 1-3, 2006, Pages 49-53

  Gu, Y ^a   Zhang, Y G ^a   Li, H ^a   Li, A Z ^a   Zhu, C ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

AlInP; Doping; Gas source molecular beam epitaxy

Indexed keywords

BERYLLIUM; MORPHOLOGY; PARAMETER ESTIMATION; SILICON; X RAY DIFFRACTION;

ALINP; DOPING; GAS SOURCE MOLECULAR BEAM EPITAXY; LATTICE MATCH COMPOSITION;

MOLECULAR BEAM EPITAXY;

EID: 33745659651     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.03.026     Document Type: Article

References (10)

1. Vurgaftman I., Meyer J.R., and Ram-Mohan L.R. J. Appl. Phys. 89 (2001) 5815
2. Takamoto T., Ikeda E., Kurita H., and Ohmori M. Appl. Phys. Lett. 70 (1997) 381
3. Karam N.H., et al. Sol. Energy Mater. Sol. Cells 66 (2001) 453
4. Murata H., Terui Y., Saitoh M., Satoh Y., and Terasaki R. Electron. Lett. 27 (1991) 1569
5. Li W., Lammasniemi J., Kazantsev A.B., Jaakkola R., Mäkelä T., and Pessa M. Electron. Lett. 34 (1998) 406
6. Haapamaa J., Pessa M., and La Roche G. Sol. Energy Mater. Sol. Cells 66 (2001) 573
7. Zhang Y.G., Gu Y., Zhu C., Li A.Z., and Liu T.D. IEEE Photon. Technol. Lett. 17 (2005) 1265
8. Enquist P., Wicks G.W., Eastman L.F., and Hitzman C. J. Appl. Phys. 58 (1985) 4130
9. Heiblum M., Wang W.I., Osterling L.E., and Deline V. J. Appl. Phys. 54 (1983) 6751
10. Sun Z.Z., Yoon S.F., and Loke W.K. J. Cryst. Growth 235 (2002) 8