Structure and electronic properties of transition metal dichalcogenide MX2 (M = Mo, W, Nb; X = S, Se) monolayers with grain boundaries

Materials Chemistry and Physics

Volumn 147, Issue 3, 2014, Pages 1068-1073

  Wang, Zhiguo ^a   Su, Qiulei ^b   Yin, G Q ^a   Shi, Jianjian ^a   Deng, Huiqiu ^b   Guan, J ^a   Wu, M P ^a   Zhou, Y L ^a   Lou, H L ^a   Fu, Y Q ^c  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b HUNAN UNIVERSITY   (China)

^c UNIVERSITY OF THE WEST OF SCOTLAND   (United Kingdom)

Author keywords

Ab initio calculations; Band structure; Grain boundaries; Layered transition metal dichalcogenides; Nanostructures

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GRAIN BOUNDARIES; MONOLAYERS; NANOELECTRONICS; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; TRANSITION METALS;

AB INITIO CALCULATIONS; FIRST PRINCIPLES; INDUCED DEFECTS; LAYERED TRANSITION METAL DICHALCOGENIDES; METALLIC MATERIAL; NANO-LAYERED MATERIALS; NANOELECTRONIC DEVICES; TRANSITION METAL DICHALCOGENIDES;

ELECTRONIC PROPERTIES;

EID: 84905695308     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2014.06.060     Document Type: Article

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