Structure and electronic properties of boron nitride sheet with grain boundaries

Journal of Nanoparticle Research

Volumn 14, Issue 3, 2012, Pages

  Wang, Zhiguo ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

BN sheet; Electronic properties; First principles calculations; GBs; Modeling and simulation

Indexed keywords

CALCULATIONS; ENERGY GAP; GRAIN BOUNDARIES; III-V SEMICONDUCTORS;

BN SHEET; BORON NITRIDE SHEETS; DEFECT LEVELS; FIRST-PRINCIPLES CALCULATION; MODEL AND SIMULATION; NANOELECTRONIC DEVICES;

ELECTRONIC PROPERTIES;

BORON NITRIDE NANOTUBE; GRAPHENE;

ARTICLE; CHEMICAL STRUCTURE; DENSITY; GRAIN BOUNDARY; MOLECULAR ELECTRONICS; PRIORITY JOURNAL; SEMICONDUCTOR; SIMULATION;

EID: 84862831196     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-012-0756-1     Document Type: Article

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