Correlation of BTI induced device parameter degradation and variation in scaled metal gate/High-k CMOS technologies

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2014, Pages

  Kerber, A ^a   Nigam, T ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

BTI variability; CMOS; high k dielectrics; metal gate; SRAM

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATE DIELECTRICS; STATIC RANDOM ACCESS STORAGE;

BTI VARIABILITY; CIRCUIT AGING; CMOS TECHNOLOGY; DEVICE PARAMETERS; DOMINANT FACTOR; HIGH-K DIELECTRIC; METAL GATE;

INTEGRATED CIRCUITS;

EID: 84905649489     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2014.6861102     Document Type: Conference Paper

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