Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O 3 thin films

Applied Physics Letters

Volumn 104, Issue 26, 2014, Pages

  Hu, Zhongqiang ^a,b   Ma, Beihai ^a   Koritala, R E ^a   Balachandran, Uthamalingam ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b Northeastern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROELECTRICITY; ELECTRIC DISCHARGES; ENERGY STORAGE; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; LEAKAGE CURRENTS; STORAGE (MATERIALS); THIN FILMS; TITANIUM COMPOUNDS;

ANTI FERROELECTRICS; ENERGY STORAGE PROPERTIES; FERROELECTRIC PHASE; FIELD-INDUCED TRANSITIONS; LOW-LEAKAGE CURRENT; PARAELECTRIC PHASE; TEMPERATURE DEPENDENT ENERGY; TEMPERATURE-INDUCED;

ZIRCONIUM COMPOUNDS;

EID: 84905647720     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4887066     Document Type: Article

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