Triggering the atomic layers control of hexagonal boron nitride films

Applied Surface Science

Volumn 313, Issue , 2014, Pages 647-653

  Song, Yangxi ^a   Zhang, Changrui ^a   Li, Bin ^a   Jiang, Da ^b   Ding, Guqiao ^b   Wang, Haomin ^b   Xie, Xiaoming ^b  

^a NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Chemical vapor deposition; Controllable atomic layers; Growth mechanism; Hexagonal boron nitride; Nickel foils

Indexed keywords

ATOMS; BORON NITRIDE; CHEMICAL VAPOR DEPOSITION; COOLING; DIELECTRIC MATERIALS; ENERGY GAP; FILMS; III-V SEMICONDUCTORS; NITRIDES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

AMBIENT PRESSURE CHEMICAL VAPOR DEPOSITIONS; ATOMIC LAYER; GROWTH MECHANISMS; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE FILMS; INPLANE ROTATION; NICKEL FOILS; SEGREGATION PROCESS;

EPITAXIAL GROWTH;

EID: 84904789142     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.06.040     Document Type: Article

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