Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers

Applied Physics Letters

Volumn 101, Issue 17, 2012, Pages

  Li, J ^a   Majety, S ^a   Dahal, R ^a   Zhao, W P ^a   Lin, J Y ^a   Jiang, H X ^a  

^a Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ALN; BAND-EDGE ABSORPTION; BAND-EDGE PHOTOLUMINESCENCE; CHEMICAL INERTNESS; CUTOFF WAVELENGTHS; DEEP ULTRAVIOLET; DETECTOR MATERIALS; DIELECTRIC STRENGTHS; EXTREME CONDITIONS; FLEXIBLE DEVICE; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); LONG WAVELENGTH; MEASURED RESULTS; REJECTION RATIOS; SAPPHIRE SUBSTRATES; WURTZITES;

EPILAYERS; GRAPHENE; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; ZINC SULFIDE;

STRENGTH OF MATERIALS;

EID: 84868015034     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4764533     Document Type: Article

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