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Volumn 26, Issue 27, 2014, Pages 4704-4710

Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells

Author keywords

charge transport; electro optical materials; photovoltaic devices; solar cells; thin films

Indexed keywords

ATOMIC LAYER DEPOSITION; CHARGE TRANSFER; ELECTROOPTICAL MATERIALS; OPEN CIRCUIT VOLTAGE; SOLAR CELLS; THIN FILMS;

EID: 84904437442     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201401054     Document Type: Article
Times cited : (250)

References (41)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.