Effects of Mg composition on open circuit voltage of Cu2OMg xZn1-xO heterojunction solar cells

Solar Energy Materials and Solar Cells

Volumn 96, Issue 1, 2012, Pages 292-297

  Duan, Ziqing ^a   Du Pasquier, Aurelien ^b   Lu, Yicheng ^a   Xu, Yi ^c   Garfunkel, Eric ^c  

^a RUTGERS UNIVERSITY   (United States)

^b The State University of New Jersey   (United States)

^c RUTGERS UNIVERSITY   (United States)

Author keywords

Cuprous oxide (Cu2O); Electrodeposition; MOCVD (metal organic chemical vapor deposition); Solar cells; Zinc oxide (ZnO)

Indexed keywords

BAND ALIGNMENTS; BOTTOM ELECTRODES; CONDUCTION BAND OFFSET; CUPROUS OXIDE; CUPROUS OXIDE (CU2O); HETEROJUNCTION SOLAR CELLS; MG CONTENT; N-TYPE SEMICONDUCTORS; P-TYPE; PHOTOVOLTAIC APPLICATIONS; SHUNT RESISTANCES; SOLAR POWER CONVERSION; VACUUM LEVEL;

CONDUCTION BANDS; CONVERSION EFFICIENCY; ELECTRODEPOSITION; ELECTRON MOBILITY; HETEROJUNCTIONS; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPEN CIRCUIT VOLTAGE; ORGANIC CHEMICALS; OXIDE FILMS; PHOTOELECTRON SPECTROSCOPY; SOLAR ENERGY; TIN; TIN OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

COPPER;

EID: 80855132622     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.09.047     Document Type: Article

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