ZnO ultraviolet random laser diode on metal copper substrate

Optics Express

Volumn 22, Issue 14, 2014, Pages 16731-16737

  Liu, C Y ^a   Xu, H Y ^a   Sun, Y ^a   Ma, J G ^a   Liu, Y C ^a  

^a NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; HETEROJUNCTIONS; LIGHT REFLECTION; METALS; SEMICONDUCTOR LASERS; THERMAL CONDUCTIVITY; ULTRAVIOLET LASERS; ZINC OXIDE;

COPPER SUBSTRATES; DIRECT FABRICATIONS; ELECTRICALLY PUMPED; HETEROJUNCTION DEVICES; HIGH THERMAL CONDUCTIVITY; LIGHT EMITTING DEVICES; STABILITY OF EMISSION; ZNO ACTIVE LAYERS;

SUBSTRATES;

EID: 84904362448     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.22.016731     Document Type: Article

References (27)

1. D. S. Wiersma, "The physics and applications of random lasers", Nat. Phys. 4(5), 359-367 (2008).
2. J. Huang, S. Chu, J. Kong, L. Zhang, C. M. Schwarz, G. Wang, L. Chernyak, Z. Chen, and J. Liu, "ZnO p-n homojunction random laser diode based on nitrogen-doped p-type nanowires", Adv. Opt. Mater. 1(2), 179-185 (2013).
3. H. Cao, Y. G. Zhao, S. T. Ho, E. W. Seelig, Q. H. Wang, and R. P. H. Chang, "Random laser action in semiconductor powder", Phys. Rev. Lett. 82(11), 2278-2281 (1999).
4. J. Fallert, R. J. B. Dietz, J. Sartor, D. Schneider, C. Klingshirn, and H. Kalt, "Co-existence of strongly and weakly localizedrandom laser modes", Nat. Photon. 3(5), 279-282 (2009).
5. H. Y. Yang, S. F. Yu, G. P. Li, and T. Wu, "Random lasing action of randomly assembled ZnO nanowires with MgO coating", Opt. Express 18(13), 13647-13654 (2010).
6. S. F. Yu, C. Yuen, S. P. Lau, and H. W. Lee, "Zinc oxide thin-film random lasers on silicon substrate", Appl. Phys. Lett. 84(17), 3244-3246 (2004).
7. H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D. Z. Shen, X. W. Fan, Z. K. Tang, X. Hou, and K. L. Choy, "Low-threshold electrically pumped random lasers", Adv. Mater. 22(16), 1877-1881 (2010).
8. H. Long, G. Fang, S. Li, X. Mo, H. Wang, H. Huang, Q. Jiang, J. Wang, and X. Zhao, "A ZnO/ZnMgO multiplequantumwell ultraviolet random laser diode", IEEE Electron Device Lett. 32(1), 54-56 (2011).
9. C. Y. Liu, H. Y. Xu, J. G. Ma, X. H. Li, X. T. Zhang, Y. C. Liu, and R. Mu, "Electrically pumped nearultraviolet lasing from ZnO/MgO core/shell nanowires", Appl. Phys. Lett. 99(6), 063115 (2011).
10. Y. Li, X. Ma, L. Jin, and D. Yang, "A chemical strategy to reinforce electrically pumped ultraviolet random lasing from ZnO films", J. Mater. Chem. 22(33), 16738-16741 (2012).
11. 1-xO heterojunction diodes and the observation of Zn-rich cluster emission", J. Lumin. 148, 116-120 (2014).
12. S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan, and Z. K. Tang, "ZnO p-n junction light-emitting diodes fabricated on sapphire substrates", Appl. Phys. Lett. 88(3), 031911 (2006).
13. Ya. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, and D. M. Bagnall, "Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6HSiC substrates", Appl. Phys. Lett. 83(23), 4719-4721 (2003).
14. K. Chung, C. H. Lee, and G. C. Yi, "Transferable GaN layers grown on Zno-coated graphene layers for optoelectronic devices", Science 330(6004), 655-657 (2010).
15. T. Doan, C. Chu, C. Chen, W. Liu, J. Chu, J. Yeh, H. Chen, F. Fan, and C. Tran, "Vertical GaN based light emitting diodes on metal alloy substrate for solid state lighting application", Proc. SPIE 6134, 61340G (2006).
16. T. Doan, C. Tran, C. Chu, C. Chen, W. H. Liu, J. Chu, K. Yen, H. Chen, and F. Fan, "Vertical GaN based light emitting diodes on metal alloy substrate boosts high power LED performance", Proc. SPIE 6669, 666903 (2007).
17. C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, and S. C. Wang, "Study of GaN light-emitting diodes fabricated by laser lift-off technique", J. Appl. Phys. 95(8), 3916-3922 (2004).
18. B. S. Tan, S. Yuan, and X. J. Kang, "Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate", Appl. Phys. Lett. 84(15), 2757-2759 (2004).
19. Y. Sun, T. Yu, Z. Chen, X. Kang, S. Qi, M. Li, G. Lian, S. Huang, R. Xie, and G. Zhang, "Properties of GaNbased light-emitting diode thin film chips fabricated by laser lift-off and transferred to Cu", Semicond. Sci. Technol. 23(12), 125022 (2008).
20. Y. F. Dong, Q. S. Li, L. C. Zhang, and L. K. Song, "Contact properties of Zno/Cu films with MSM structure", Chin. J. Lumin. 33, 412-416 (2012).
21. C. Y. Liu, H. Y. Xu, L. Wang, X. H. Li, and Y. C. Liu, "Pulsed laser deposition of high Mg-content MgZnO films: Effects of substrate temperature and oxygen pressure", J. Appl. Phys. 106(7), 073518 (2009).
22. C. Liu, H. Xu, J. Ma, and Y. Liu, "Origin of ultraviolet electroluminescence in n-ZnO/p-GaN and n-MgZnO/p-GaN heterojunction light-emitting diodes", Phys. Status Solidi A 210(12), 2751-2755 (2013).
23. C. H. Chen, S. J. Chang, S. P. Chang, M. J. Li, I. C. Chen, T. J. Hsueh, and C. L. Hsu, "Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emitting diodes", Appl. Phys. Lett. 95(22), 223101 (2009).
24. C. Y. Liu, Center for Advanced Optoelectronic Functional Materials Research, Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
25. 2O inserted ZnO-based metal-insulator-semiconductor heterostructure device."
26. E. F. Schubert, Light-Emitting Diodes (Cambridge University, 2003).
27. S. Gottardo, S. Cavalieri, O. Yaroshchuk, and D. S. Wiersma, "Quasi-two-dimensional diffusive random laser action", Phys. Rev. Lett. 93(26), 263901 (2004).