Contact properties of ZnO/Cu films with MSM structure

Faguang Xuebao/Chinese Journal of Luminescence

Volumn 33, Issue 4, 2012, Pages 412-416

  Dong, Yan Feng ^a   Li, Qing Shan ^a,b   Zhang, Li Chun ^a   Song, Lian Ke ^a  

^a QUFU NORMAL UNIVERSITY   (China)

^b LUDONG UNIVERSITY   (China)

Author keywords

Cu electrode; MSM structure; Ohmic contact; ZnO thin films

Indexed keywords

CONTACT ELECTRODES; CONTACT PROPERTIES; CU ELECTRODE; CU FILMS; MSM STRUCTURES; SEM IMAGE; SI(111) SUBSTRATE; XRD; ZNO; ZNO FILMS; ZNO THIN FILM;

ELECTRIC CONTACTORS; ELECTRODES; METALLIC FILMS; OHMIC CONTACTS; PULSED LASER DEPOSITION; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84860618128     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: 10.3788/fgxb20123304.0412     Document Type: Article

References (17)

1. Mondia J P, Sharma R, Schfer J, et al. An electrodynamically confined single ZnO tetrapod laser [J]. Appl. Phys. Lett., 2008, 93(3): 121102-1-3.
2. Wu Y L, Lim C S, Fu S. Surface modifications of ZnO quantum dots for bio-imagine [J]. Nano-technology, 2007, 18(9): 215604-1-9.
3. Kim K K, Lee S D, Kim H, et al. Enhanced light extraction efficiency of GaN-based light emitting diodes with ZnO nanorod arrays grown using aqueous solution [J]. Appl. Phys. Lett., 2009, 94(3): 071118-1-3.
4. Liu Binghui, Yao Bin, Li Yongfeng, et al. Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate [J]. Chin. J. Lumin., 2010, 31(6): 854-858 (in English).
5. Zhao Yanmin, Zhang Jiying, Zhang Xiyan, et al. A back-illuminated Au/ZnO/Al Shottky UV photodetector [J]. Chin. J. Lumin., 2010, 31(4): 527-530 (in Chinese).
6. Guo Liang, Zhao Dongxu, Zhang Zhenzhong, et al. Optoelectronic properties of ZnO/Ag/ZnO multiple films [J]. Chin. J. Lumin., 2011, 32(9): 920-923 (in Chinese).
7. Hwang Daekue, Ohm Insuk, Lim Jaehong, et al. Effect of annealing temperature and ambient gas on phosphorus doped p-type ZnO [J]. Appl. Phys. Lett., 2007, 90(2): 021106-1-3.
8. Wang Xin, Lv Youming, Shen Dezhen, et al. Ni/Au contact to n-doped p-type ZnO [J]. Chin. J. Lumin., 2006, 27(3): 426-428 (in Chinese).
9. Zeng Y J, Ye Z Z, Xu W Z, et al. Dopant source choice for formation of p-type ZnO:Li acceptor [J]. Appl. Phys. Lett., 2006, 88(6): 062107-1-3.
10. Coppa B J, Davis R F, Nemanich R J. Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(0001) [J]. Appl. Phys. Lett., 2003, 82(3): 400-402.
11. Keem K, Kim H, Kim G T, et al. Photocurrent in ZnO nanowires grown from Au electrode [J]. Appl. Phys. Lett., 2004, 84(22): 4376-4378.
12. Sun H, Zhang Q, Zhang J, et al. Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction [J]. Appl. Phys. B, 2008, 90(3-4): 543-546.
13. Liu W, Gu S L, Ye J D, et al. Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique [J]. Appl. Phys. Lett., 2006, 88(9): 092101-1-3
14. Cullity B D. Elements of X-ray Diffraction [M]. 2nd edition. Mass: Addision-Wesley, 1978.
15. Lide D R. CRC Handbook of Chemistry and Physics [M]. Boca Raton: CRC, 2009.
16. Sundaram K B, Khan A. Work function determination of zinc oxide films [J]. J. Vac. Sci. Technol. A, 1997, 15(2): 428-430.
17. Liu Enke, Zhu Bingsheng, Luo Jinsheng. Physics of Semiconductor [M]. 7th edition. Beijing: Publishing House of Electronics Industry, 2008: 216-233 (in Chinese).