Ge L3-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge2Sb2Te5

Journal of Applied Physics

Volumn 115, Issue 17, 2014, Pages

  Mitrofanov, K V ^a   Kolobov, A V ^a,c   Fons, P ^a,c   Wang, X ^a   Tominaga, J ^a   Tamenori, Y ^b   Uruga, T ^b   Ciocchini, N ^c   Ielmini, D ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^c POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALLOYS; PHASE CHANGE MEMORY; STRUCTURAL RELAXATION; X RAY ABSORPTION;

AMORPHOUS PHASE; CRYSTALLINE PHASE; ELECTRICAL CONDUCTIVITY; ELECTRONIC CONFIGURATION; FREE CARRIERS; LONE PAIR ELECTRONS; PHASE CHANGES; X-RAY ABSORPTION NEAR-EDGE STRUCTURE;

GERMANIUM;

EID: 84903896569     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4874415     Document Type: Conference Paper

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