Amorphous phase of GeTe-based phase-change memory alloys: Polyvalency of Ge-Te bonding and polyamorphism

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 6, 2012, Pages 1031-1035

  Kolobov, Alexander V ^a   Fons, Paul ^a   Krbal, Milos ^a   Tominaga, Junji ^a  

^a Tsukuba Central 4   (Japan)

Author keywords

amorphous; phase change; polyamorphism; polyvalency; structure

Indexed keywords

AMORPHOUS PHASE; HIGH RESISTIVITY; MEMORY ALLOY; NEGATIVE-U; PHASE CHANGES; POLYAMORPHISM; POLYVALENCY;

AMORPHOUS MATERIALS; GERMANIUM; PHASE CHANGE MEMORY; STRUCTURE (COMPOSITION);

AMORPHOUS ALLOYS;

EID: 84862234781     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201100752     Document Type: Article

References (20)

1. N. Yamada, and, T. Matsunaga, J. Appl. Phys. 88, 7020-7028 (2000).
2. T. Nonaka, G. Ohbayashi, Y. Toriumi, Y. Mori, and, H. Hashimoto, Thin Solid Films 370, 258-261 (2000).
3. A. Kolobov, P. Fons, A. Frenkel, A. Ankudinov, J. Tominaga, and, T. Uruga, Nature Mater. 3 (9), 703-708 (2004).
4. G. Lucovsky, and, R. White, Phys. Rev. B 8 (2), 660-667 (1973).
5. K. Shportko, S. Kremers, M. Woda, D. Lencer, J. Robertson, and, M. Wuttig, Nature Mater. 7 (7), 653-658 (2008).
6. A. V. Kolobov, M. Krbal, P. Fons, J. Tominaga, and, T. Uruga, Nature Chem. 3 (4), 311-316 (2011).
7. A. Kolobov, H. Oyanagi, K. Tanaka, and, K. Tanaka, Phys. Rev. B 55 (2), 726-734 (1997).
8. S. Caravati, M. Bernasconi, T. Kühne, M. Krack, and, M. Parrinello, Appl. Phys. Lett. 91, 171906 (2007).
9. J. Akola, and, R. Jones, Phys. Rev. B 76 (23), 235201 (2007).
10. J. Hegedüs, and, S. Elliott, Nature Mater. 7 (5), 399-405 (2008).
11. M. Krbal, A. Kolobov, P. Fons, J. Tominaga, S. Elliott, J. Hegedus, and, T. Uruga, Phys. Rev. B 83 (5) 054203 (2011).
12. X. B. Li, X. Q. Liu, X. Liu, D. Han, Z. Zhang, X. D. Han, H. B. Sun, and, S. B. Zhang, Phys. Rev. Lett. 107, 015501 (2011).
13. R. E. Simpson, P. Fons, A. V. Kolobov, T. Fukaya, M. Krbal, T. Yagi, and, J. Tominga, Nature Nanotechnol. 6 (7), 501-505 (2011).
14. N. Mott, Adv. Phys. 16 (61), 49-144 (1967).
15. P. Anderson, Phys. Rev. Lett. 34 (15), 953-955 (1975).
16. M. Kastner, D. Adler, and, H. Fritzsche, Phys. Rev. Lett. 37 (22), 1504-1507 (1976).
17. B. Huang, and, J. Robertson, Defects and electrical storage mechanism in GeSbTe phase-change materials, in: Proceedings of the 24th International Conference on Amorphous and Nanocrystalline Semiconductors, Nara, Japan, 21 August 2011.
18. P. Fons, H. Osawa, A. V. Kolobov, T. Fukaya, M. Suzuki, T. Uruga, N. Kawamura, H. Tanida, and, J. Tominaga, Phys. Rev. B 82 (4), 041203 (2010).
19. J. Akola, J. Larrucea, and, R. O. Jones, Phys. Rev. B 83, 094113 (2011).
20. M. Xu, Y. Meng, Y. Q. Cheng, H. W. Sheng, X. D. Han, and, E. Ma, J. Appl. Phys. 108 (8), 083519 (2010).