Crystalline In-Ga-Zn-O FET-based configuration memory for multi-context field-programmable gate array realizing fine-grained power gating

Japanese Journal of Applied Physics

Volumn 53, Issue 4 SPEC. ISSUE, 2014, Pages

  Kozuma, Munehiro ^a   Okamoto, Yuki ^a   Nakagawa, Takashi ^a   Aoki, Takeshi ^a   Ikeda, Masataka ^a   Osada, Takeshi ^a   Kurokawa, Yoshiyuki ^a   Ikeda, Takayuki ^a   Yamade, Naoto ^a   Okazaki, Yutaka ^a   Miyairi, Hidekazu ^a   Fujita, Masahiro ^b   Koyama, Jun ^a   Yamazaki, Shunpei ^a  

^a SEMICONDUCTOR ENERGY LABORATORY CO LTD   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; FIELD EFFECT TRANSISTORS; FIELD PROGRAMMABLE GATE ARRAYS (FPGA); GALLIUM; STATIC RANDOM ACCESS STORAGE; ZINC;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONFIGURATION MEMORY; FINE-GRAINED POWER GATING; HYBRID PROCESS; OXIDE SEMICONDUCTOR; PROGRAMMABLE LOGIC; ROUTING SWITCHES; STATIC RANDOM ACCESS MEMORY;

C (PROGRAMMING LANGUAGE);

EID: 84903301856     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.53.04EE12     Document Type: Conference Paper

References (27)

1. S. Trimberger, D. Carberry, A. Johnson, and J. Wong, Proc. IEEE Symp. FPGA-Based Custom Computing Machines, 1997, p. 22.
2. N. Miyamoto and T. Ohmi, Proc. IEEE Asian Solid-State Circuits Conf., 2008, p. 89.
3. A. Rahman, S. Das, T. Tuan, and S. Trimberger, Proc. IEEE Custom Integrated Circuit Conf., 2006, p. 9.
4. Y. Lin, F. Li, and L. He, Proc. Asia and South Pacific Design Automation Conf., 2005, p. 645.
5. D. Suzuki, M. Natsui, H. Ohno, and T. Hanyu, Ext. Abstr. Solid State Devices and Materials, 2010, p. 1146.
6. D. Suzuki, M. Natsui, S. Ikeda, H. Hasegawa, K. Miura, J. Hayakawa, T. Endoh, H. Ohno, and T. Hanyu, Proc. VLSI Circuits Symp., 2009, p. 80.
7. D. Choi, K. Choi, and J. D. Villasenor, IEEE Trans. VLSI Syst. 16, 874 (2008).
8. S. Amano, H. Harada, K. Akimoto, J. Sakata, T. Nishi, K. Moriya, K. Wakimoto, J. Koyama, S. Yamazaki, Y. Oikawa, T. Ikeyama, and M. Sakakura, SID Symp. Dig. Tech. Pap. 41, 626 (2010).
9. N. Sugisawa, T. Sasaki, T. Ushikubo, N. Ohsawa, S. Seo, K. Hatano, T. Nagata, S. Fukai, T. Murakawa, S. Yoshitomi, M. Hayakawa, H. Miyake, J. Koyama, S. Yamazaki, K. Okazaki, and M. Sakakura, SID Symp. Dig. Tech. Pap. 42, 722 (2011).
10. H. Shishido, S. Amano, K. Toyotaka, H. Miyake, T. Murakawa, T. Nishi, Y. Hirakata, J. Koyama, S. Yamazaki, K. Okazaki, T. Handa, and M. Sakakura, SID Symp. Dig. Tech. Pap. 42, 369 (2011).
11. H. Tamura, T. Hamada, T. Nakagawa, T. Aoki, M. Ikeda, M. Kozuma, Y. Kurokawa, T. Ikeda, K. Moriya, Y. Hirakata, N. Kamata, T. Murakawa, J. Koyama, S. Yamazaki, K. Tochibayashi, K. Okazaki, and M. Sakakura, SID Symp. Dig. Tech. Pap. 42, 729 (2011).
12. S. Yamazaki, presented at Int. Workshop Private Sector-Academia Interactions, 2011.
13. S. Yamazaki, J. Koyama, Y. Yamamoto, and K. Okamoto, SID Symp. Dig. Tech. Pap. 43, 183 (2012).
14. T. Tanabe, S. Amano, H. Miyake, A. Suzuki, R. Komatsu, J. Koyama, S. Yamazaki, K. Okazaki, M. Katayama, H. Matsukizono, Y. Kanzaki, and T. Matsuo, SID Int. Symp. Dig. Tech. Pap. 43, 88 (2012).
15. T. Ohmaru, S. Yoneda, T. Nishijima, M. Endo, H. Dembo, M. Fujita, H. Kobayashi, K. Ohshima, T. Atsumi, Y. Shionoiri, K. Kato, Y. Maehashi, J. Koyama, and S. Yamazaki, Ext. Abstr. Solid State Devices and Materials, 2012, p. 1144.
16. H. Inoue, T. Matsuzaki, S. Nagatsuka, Y. Okazaki, T. Sasaki, K. Noda, D. Matsubayashi, T. Ishizu, T. Onuki, A. Isobe, Y. Shionoiri, K. Kato, T. Okuda, J. Koyama, and S. Yamazaki, IEEE J. Solid-State Circuits 47, 2258 (2012).
17. T. Aoki, M. Ikeda, M. Kozuma, H. Tamura, Y. Kurokawa, T. Ikeda, Y. Endo, T. Maruyama, N. Matsumoto, Y. Ieda, A. Isobe, J. Koyama, and S. Yamazaki, Proc. VLSI Technology Symp., 2011, p. 174.
18. Y. Kurokawa, Y. Okamoto, T. Nakagawa, T. Aoki, M. Ikeda, M. Kozuma, T. Osada, T. Ikeda, N. Yamade, Y. Okazaki, H. Miyairi, M. Fujita, J. Koyama, and S. Yamazaki, Proc. Asia Symp. Quality Electronic Design, 2013, p. 66.
19. Y. Okamoto, T. Nakagawa, T. Aoki, M. Ikeda, M. Kozuma, T. Osada, Y. Kurokawa, T. Ikeda, N. Yamade, Y. Okazaki, H. Miyairi, J. Koyama, and S. Yamazaki, ECS Trans. 54 [1], 141 (2013).
20. N. Kimizuka and T. Mohri, J. Solid State Chem. 60, 382 (1985).
21. N. Kimizuka, M. Isobe, and M. Nakamura, J. Solid State Chem. 116, 170 (1995).
22. M. Nakamura, NIRIM Newsl. 150, 1 (1995).
23. M. Nakamura, N. Kimizuka, and T. Mohri, J. Solid State Chem. 93, 298 (1991).
24. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science 300, 1269 (2003).
25. K. Nomura, T. Kamiya, H. Ohta, K. Ueda, M. Hirano, and H. Hosono, Appl. Phys. Lett. 85, 1993 (2004).
26. M. Takahashi, M. Nakashima, T. Honda, A. Miyanaga, H. Ohara, T. Murakawa, M. Hayakawa, K. Akimoto, K. Okazaki, M. Yokoyama, M. Sakakura, and S. Yamazaki, Proc. AM-FPD'11 Dig., 2011, p. 271.
27. Y. Sekine, K. Furutani, Y. Shionoiri, K. Kato, J. Koyama, and S. Yamazaki, ECS Trans. 37 [1], 77 (2011).