Enhanced thermoelectric performance of Al-doped ZnO thin films on amorphous substrate

Japanese Journal of Applied Physics

Volumn 53, Issue 6, 2014, Pages

  Saini, Shrikant ^a   Mele, Paolo ^a   Honda, Hiroaki ^a   Henry, Dave J ^b   Hopkins, Patrick E ^b   Molina Luna, Leopoldo ^c   Matsumoto, Kaname ^d   Miyazaki, Koji ^d   Ichinose, Ataru ^e  

^a HIROSHIMA UNIVERSITY   (Japan)

^b University of Virginia   (United States)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^d KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^e CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRIC POWER FACTOR; PULSED LASER DEPOSITION; THERMOELECTRICITY; ZINC OXIDE;

AL-DOPED ZNO THIN FILMS; AMORPHOUS SUBSTRATE; CRYSTALLINITIES; ELECTRICAL CONDUCTIVITY; EXPERIMENTAL CONDITIONS; FIGURE OF MERITS; POWER FACTORS; THERMOELECTRIC PERFORMANCE;

ALUMINUM;

EID: 84903190689     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.53.060306     Document Type: Article

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