Effect of substrate on thermoelectric properties of Al-doped ZnO thin films

Applied Physics Letters

Volumn 102, Issue 25, 2013, Pages

  Mele, P ^a   Saini, S ^a   Honda, H ^a   Matsumoto, K ^b   Miyazaki, K ^b   Hagino, H ^b   Ichinose, A ^c  

^a HIROSHIMA UNIVERSITY   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^c CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO THIN FILMS; DEPOSITION TEMPERATURES; DISLOCATION DENSITIES; ELECTRICAL CONDUCTIVITY; EPITAXIAL STRAIN; LOW TEMPERATURES; PULSED-LASER DEPOSITION TECHNIQUE; THERMOELECTRIC PROPERTIES;

DEPOSITION; ELECTRIC POWER FACTOR; OPTICAL FILMS; PULSED LASER DEPOSITION; SUBSTRATES; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; THIN FILMS;

ALUMINUM;

EID: 84879871707     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812401     Document Type: Article

References (20)

1. Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reschikov, S. Doġan, V. Avrutin, S.-J. Cho, and H. Morko, J. Appl. Phys. 98, 041301 (2005). 10.1063/1.1992666
2. J. W. Fergus, J. Eur. Ceram. Soc. 32, 525 (2012). 10.1016/j.jeurceramsoc. 2011.10.007
3. J. P. Wiff, Y. Kinemuchi, and K. Watari, Mater. Lett. 63, 2470 (2009). 10.1016/j.matlet.2009.08.036
4. R. Venkatasubramanian, E. Siivola, T. Colpitts, and B. O'Quinn, Nature (London) 413, 597-602 (2001). 10.1038/35098012
5. L. D. Hicks and M. S. Dresselhaus, Phys. Rev. B 47, 12727 (1993) 10.1103/PhysRevB.47.12727.
6. M. Ohtaki, T. Tsubota, K. Eguchi, and H. Arai, J. Appl. Phys. 79, 1816 (1996). 10.1063/1.360976
7. K. Matsumoto and P. Mele, Supercond. Sci. Technol. 23, 014001 (2010). 10.1088/0953-2048/23/1/014001
8. A. I. Abutaha, S. R. S. Kumar, and H. N. Alshareef, Appl. Phys. Lett. 102, 053507 (2013). 10.1063/1.4790644
9. N. Vogel-Schäuble, Y. E. Romanyuk, S. Yoon, K. J. Saji, S. Popuolh, S. Pokrant, M. H. Aguirre, and A. Wiedenkaff, Thin Solid Films 520, 6869 (2012). 10.1016/j.tsf.2012.07.046
10. P. Mele, K. Matsumoto, T. Azuma, K. Kamesawa, S. Tanaka, J.-I. Kurosaki, and K. Miyazaki, MRS Proc. 1166, 1166-N03-23 (2009). 10.1557/PROC-1166-N03-23
11. 0.02O legs.," Met. Mater. Int. (submitted).
12. H. Hiramatsu, H. Ohta, W.-S. Seo, and K. Koumoto, J. Jpn. Soc. Powder Powder Metall. 44, 44 (1997). 10.2497/jjspm.44.44
13. A. Ioffe, Semiconductor Thermoelements and Thermoelectric Cooling (Infosearch, Ltd., London, 1957).
14. J. R. Watling and D. J. Paul, J. Appl. Phys. 110, 114508 (2011). 10.1063/1.3665127
15. J. M. Woodall, G. D. Pettit, T. N. Jackson, C. Lanza, K. L. Kavanagh, and J. W. Mayer, Phys. Rev. Lett. 51, 1783 (1983). 10.1103/PhysRevLett.51.1783
16. J. Narayan, K. Dovidenko, A. K. Sharma, and S. Oktyabrsky, J. Appl. Phys. 84, 2597 (1998). 10.1063/1.368440
17. H. Kato, M. Sano, K. Miyamoto, and T. Yao, Jpn. J. Appl. Phys. 42, L1002 (2003). 10.1143/JJAP.42.L1002
18. N. Peranio, O. Eibl, and J. Nurnus, J. Appl. Phys. 100, 114306 (2006). 10.1063/1.2375016
19. S. H. Park, T. Hanada, D. C. Oh, T. Minegishi, H. Goto, G. Fujimoto, J. S. Park, I. H. Im, J. H. Chang, M. W. Cho, and T. Yao, Appl. Phys. Lett. 91, 231904 (2007). 10.1063/1.2813021
20. T. Nakamura, Y. Yamada, T. Kusumori, H. Minoura, and H. Muto, Thin Solid Films 411, 60 (2002). 10.1016/S0040-6090(02)00188-8