SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 104, Issue 23, 2014, Pages

Synthesis and memory properties of a self-assembled Al@Al2O 3 core-shell nanoparticle layer for floating gate devices

(2) Park, Sang Joon a Yoon, Jong Hwan a

a Kangwon National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

NANOPARTICLES; SHELLS (STRUCTURES); SILICON OXIDES;

CAPACITANCE VOLTAGE MEASUREMENTS; CORE-SHELL NANOPARTICLES; FLOATING GATE MEMORY DEVICES; FLOATING-GATE DEVICES; MEMORY PROPERTIES; SELF-ASSEMBLED; SEMICONDUCTOR CAPACITORS; SILICON-RICH OXIDE;

ALUMINUM;

EID: 84902477793 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4882999 Document Type: Article

Times cited : (8)

References (13)

1
- 36449008130
- 10.1063/1.116085
- S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé, and K. Chan, Appl. Phys. Lett. 68, 1337 (1996). 10.1063/1.116085
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1337
- Tiwari, S.¹ Rana, F.² Hanafi, H.³ Hartstein, A.⁴ Crabbé, E.F.⁵ Chan, K.⁶

2
- 0035898519
- 10.1063/1.1385190
- M. L. Ostraata, J. W. De Blauwe, M. L. Green, L. D. Bell, M. L. Brongersma, J. Casperson, R. C. Flagan, and H. A. Atwater, Appl. Phys. Lett. 79, 433 (2001). 10.1063/1.1385190
- (2001) Appl. Phys. Lett. , vol.79 , pp. 433
- Ostraata, M.L.¹ De Blauwe, J.W.² Green, M.L.³ Bell, L.D.⁴ Brongersma, M.L.⁵ Casperson, J.⁶ Flagan, R.C.⁷ Atwater, H.A.⁸

3
- 54849374700
- 10.1109/LED.2008.2002944
- T. Y. Chiang, T. S. Chao, Y. H. Wu, and W. L. Yang, IEEE Electron Device Lett. 29, 1148 (2008). 10.1109/LED.2008.2002944
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 1148
- Chiang, T.Y.¹ Chao, T.S.² Wu, Y.H.³ Yang, W.L.⁴

4
- 84859798461
- 10.1063/1.3700729
- Y. C. Lien, J. M. Shieh, W. H. Huang, C. H. Tu, C. Wang, C. H. Shen, B. T. Dai, C. L. Pan, C. Hu, and F. L. Yang, Appl. Phys. Lett. 100, 143501 (2012). 10.1063/1.3700729
- (2012) Appl. Phys. Lett. , vol.100 , pp. 143501
- Lien, Y.C.¹ Shieh, J.M.² Huang, W.H.³ Tu, C.H.⁴ Wang, C.⁵ Shen, C.H.⁶ Dai, B.T.⁷ Pan, C.L.⁸ Hu, C.⁹ Yang, F.L.¹⁰

5
- 84944812174
- 10.1002/j.1538-7305.1967.tb01738.x
- D. Kahng and S. M. Sze, Bell Syst. Tech. J. 46, 1288 (1967). 10.1002/j.1538-7305.1967.tb01738.x
- (1967) Bell Syst. Tech. J. , vol.46 , pp. 1288
- Kahng, D.¹ Sze, S.M.²

6
- 0036714604
- 10.1109/TED.2002.802617
- Z. Liu, C. Lee, V. Narayanan, C. Pei, and E. C. Kan, IEEE Trans. Electron Devices 49, 1606 (2002). 10.1109/TED.2002.802617
- (2002) IEEE Trans. Electron Devices , vol.49 , pp. 1606
- Liu, Z.¹ Lee, C.² Narayanan, V.³ Pei, C.⁴ Kan, E.C.⁵

7
- 13244267365
- 10.1007/s11664-005-0172-8
- C. Lee, J. Meteer, V. Narayanan, and E. Kan, J. Electron. Mater. 34, 1 (2005). 10.1007/s11664-005-0172-8
- (2005) J. Electron. Mater. , vol.34 , pp. 1
- Lee, C.¹ Meteer, J.² Narayanan, V.³ Kan, E.⁴

8
- 46049097965
- 10.1063/1.2952287
- Y.-S. Jang, J.-H. Yoon, and R. G. Elliman, Appl. Phys. Lett. 92, 253108 (2008). 10.1063/1.2952287
- (2008) Appl. Phys. Lett. , vol.92 , pp. 253108
- Jang, Y.-S.¹ Yoon, J.-H.² Elliman, R.G.³

9
- 0038732556
- 10.1109/LED.2002.807694
- B. Govoreanu, P. Blomme, M. Rosmeulen, J. Van Houdt, and K. De Meyer, IEEE Electron Device Lett. 24, 99 (2003). 10.1109/LED.2002.807694
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 99
- Govoreanu, B.¹ Blomme, P.² Rosmeulen, M.³ Van Houdt, J.⁴ De Meyer, K.⁵

10
- 0000090297
- 10.1063/1.122402
- K. K. Lihkarev, Appl. Phys. Lett. 73, 2137 (1998). 10.1063/1.122402
- (1998) Appl. Phys. Lett. , vol.73 , pp. 2137
- Lihkarev, K.K.¹

11
- 69249200552
- 10.3938/jkps.55.116
- G. H. Park, K. S. Kim, M. H. Jung, W. J. Cho, and J. Jung, J. Korean Phys. Soc. 55, 116 (2009). 10.3938/jkps.55.116
- (2009) J. Korean Phys. Soc. , vol.55 , pp. 116
- Park, G.H.¹ Kim, K.S.² Jung, M.H.³ Cho, W.J.⁴ Jung, J.⁵

12
- 11144223238
- 10.1109/TDMR.2004.837120
- P. Blomme, J. Van Houdt, and K. D. Meyer, IEEE Trans. Device Mater. Reliab. 4, 345 (2004). 10.1109/TDMR.2004.837120
- (2004) IEEE Trans. Device Mater. Reliab. , vol.4 , pp. 345
- Blomme, P.¹ Van Houdt, J.² Meyer, K.D.³

13
- 0035307245
- 10.1109/16.915694
- Y. C. King, T. J. King, and C. Hu, IEEE Trans. Electron Devices 48, 696 (2001). 10.1109/16.915694
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 696
- King, Y.C.¹ King, T.J.² Hu, C.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.