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Nanoscale

Volumn 6, Issue 13, 2014, Pages 7474-7479

Opening a band gap without breaking lattice symmetry: A new route toward robust graphene-based nanoelectronics

(5) Kou, Liangzhi a Hu, Feiming a Yan, Binghai b,c Frauenheim, Thomas a Chen, Changfeng d

a UNIVERSITY OF BREMEN (Germany)

b MAX PLANCK INSTITUTE FOR CHEMICAL PHYSICS OF SOLIDS (Germany)

c MAX PLANCK INSTITUT FÜR PHYSIK KOMPLEXER SYSTEME (Germany)

d UNIVERSITY OF NEVADA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ENERGY GAP; HETEROJUNCTIONS; NANOELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

EXPERIMENTAL REALIZATIONS; EXTERNAL POWER SUPPLIES; FABRICATION TECHNIQUE; QUANTUM WELL STRUCTURES; SEMICONDUCTOR INDUSTRY; SPIN-ORBIT COUPLING EFFECTS; SPIN-ORBIT COUPLINGS; TIGHT-BINDING CALCULATIONS;

GRAPHENE;

EID: 84902438575 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr01102c Document Type: Article

Times cited : (19)

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