Photolithographic properties of tin-oxo clusters using extreme ultraviolet light (13.5 nm)

Microelectronic Engineering

Volumn 127, Issue , 2014, Pages 44-50

  Cardineau, Brian ^a   Del Re, Ryan ^a   Marnell, Miles ^b   Al Mashat, Hashim ^b   Vockenhuber, Michaela ^c   Ekinci, Yasin ^c   Sarma, Chandra ^d   Freedman, Daniel A ^b   Brainard, Robert L ^a  

^a SUNY POLYTECHNIC INSTITUTE   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

^d SEMATECH   (United States)

Author keywords

Cluster; EUV; Organometallic; Photolysis; Photoresist; Tin

Indexed keywords

CARBON; CARBOXYLATION; EXTREME ULTRAVIOLET LITHOGRAPHY; FILM PREPARATION; ORGANOMETALLICS; OXIDE FILMS; PHOTOLYSIS; PHOTORESISTS; SENSITIVITY ANALYSIS; SILICON WAFERS; TIN;

CLUSTER; COUNTER ANIONS; EUV; EXTREME ULTRA-VIOLET LIGHTS; EXTREME ULTRAVIOLET; HIGH RESOLUTION; ORGANIC LIGANDS; P-TOLUENESULFONATES;

TIN OXIDES;

EID: 84902270818     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2014.04.024     Document Type: Article

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