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Volumn 7639, Issue , 2010, Pages

Development of an inorganic photoresist for DUV, EUV, and electron beam imaging

Author keywords

193 nm lithography; electron beam lithography; etch resistance; EUV lithography; inorganic photoresist

Indexed keywords

193 NM LITHOGRAPHY; CHEMICALLY AMPLIFIED RESIST; CRITICAL ASPECT RATIO; DEPTH OF FOCUS; E-BEAM LITHOGRAPHY; ELECTRON BEAM IMAGING; ETCH DATA; ETCH RESISTANCE; EUV LITHOGRAPHY; FEATURE SIZES; HARDMASKS; IMAGING DATA; INORGANIC PHOTORESISTS; INORGANIC RESIST; LINE EDGE ROUGHNESS; NEGATIVE TONE PHOTORESIST; NEGATIVE TONES; ORGANIC LIGANDS; PATTERN COLLAPSE; PHYSICAL CHARACTERISTICS; PROCESSING COSTS; RESIST THICKNESS; SOL-GEL PROCESSING; THICK RESIST;

EID: 77953490694     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846672     Document Type: Conference Paper
Times cited : (73)

References (4)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.