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Volumn 7639, Issue , 2010, Pages
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Development of an inorganic photoresist for DUV, EUV, and electron beam imaging
a a a a b b b c a a |
Author keywords
193 nm lithography; electron beam lithography; etch resistance; EUV lithography; inorganic photoresist
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Indexed keywords
193 NM LITHOGRAPHY;
CHEMICALLY AMPLIFIED RESIST;
CRITICAL ASPECT RATIO;
DEPTH OF FOCUS;
E-BEAM LITHOGRAPHY;
ELECTRON BEAM IMAGING;
ETCH DATA;
ETCH RESISTANCE;
EUV LITHOGRAPHY;
FEATURE SIZES;
HARDMASKS;
IMAGING DATA;
INORGANIC PHOTORESISTS;
INORGANIC RESIST;
LINE EDGE ROUGHNESS;
NEGATIVE TONE PHOTORESIST;
NEGATIVE TONES;
ORGANIC LIGANDS;
PATTERN COLLAPSE;
PHYSICAL CHARACTERISTICS;
PROCESSING COSTS;
RESIST THICKNESS;
SOL-GEL PROCESSING;
THICK RESIST;
ASPECT RATIO;
ELECTRON BEAM LITHOGRAPHY;
ELECTRON BEAMS;
ELECTRON OPTICS;
ELECTRONS;
GELS;
HAFNIUM;
HAFNIUM OXIDES;
LIGANDS;
MATERIALS;
NANOCOMPOSITES;
NANOPARTICLES;
REFRACTIVE INDEX;
ROUGHNESS MEASUREMENT;
SOL-GEL PROCESS;
SURFACE CHEMISTRY;
SURFACE TREATMENT;
PHOTORESISTS;
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EID: 77953490694
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.846672 Document Type: Conference Paper |
Times cited : (73)
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References (4)
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