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Journal of Applied Physics

Volumn 115, Issue 20, 2014, Pages

A one-dimensional Fickian model to predict the Ga depth profiles in three-stage Cu(In,Ga)Se2

(3) Rodriguez Alvarez, H a,b Mainz, R b Sadewasser, S a

a INTERNATIONAL IBERIAN NANOTECHNOLOGY LABORATORY (Portugal)

b HAHN MEITNER INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; GALLIUM; SEMICONDUCTING SELENIUM COMPOUNDS;

ATOMIC FLUXES; CU (IN ,GA)SE; DEPOSITION STAGES; FICKIAN MODEL; LOW SUBSTRATE TEMPERATURE; REACTION EQUATIONS; STRUCTURAL DATA; THERMAL CO-EVAPORATION;

GALLIUM ALLOYS;

EID: 84901992509 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4880298 Document Type: Article

Times cited : (17)

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