Device modeling and simulation of the performance of Cu(In 1-x,Gax)Se2 solar cells

Solid-State Electronics

Volumn 48, Issue 1, 2004, Pages 73-79

  Song, Jiyon ^a   Li, Sheng S ^a   Huang, C H ^b   Crisalle, O D ^a   Anderson, T J ^a  

^a University of Florida   (United States)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

Conversion efficiency; Cu(In,Ga)Se2 (CIGS); Device modeling; Graded band gap; Open circuit voltage ( Voc ); Short circuit current density ( Jsc ); Thin film solar cell

Indexed keywords

COMPUTER SIMULATION; COPPER COMPOUNDS; CURRENT DENSITY; ELECTRIC POTENTIAL; PHOTOCURRENTS; QUANTUM EFFICIENCY; THIN FILMS;

CONVERSION EFFICIENCY;

SOLAR CELLS;

EID: 0142247335     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00289-2     Document Type: Article

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