Photoconductivity and transient response of Al:ZnO:Al planar structures fabricated via a thermal oxidation process

Thin Solid Films

Volumn 540, Issue , 2013, Pages 106-111

  Covington, Laura R ^a   Moore, J Christopher ^a  

^a Department of Public Health   (United States)

Author keywords

Persistent photoconductivity; Photodetector; Responsivity; Transient; UV photoconductivity; Zinc oxide

Indexed keywords

ALUMINUM COATINGS; ANNEALING; DEPOSITION; METAL ANALYSIS; METALLIC FILMS; PHOTOCONDUCTIVITY; PHOTODETECTORS; PHOTONS; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; THERMOOXIDATION; TRANSIENT ANALYSIS; TRANSIENTS; ZINC; ZINC OXIDE;

ANNEALING TEMPERATURES; C-PLANE SAPPHIRE SUBSTRATES; METAL SEMICONDUCTOR METAL; PERSISTENT PHOTOCONDUCTIVITY; PHENOMENOLOGICAL MODELING; RESPONSIVITY; THERMAL OXIDATION PROCESS; UV PHOTOCONDUCTIVITIES;

ALUMINUM;

EID: 84901857905     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.05.128     Document Type: Article

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