First-principles study of atomic structures and electronic properties of ultrathin Bi films on Ge(111)

Surface Science

Volumn 626, Issue , 2014, Pages 68-75

  Hsu, Chia Hsiu ^a   Chang, Hua Rong ^a   Chuang, Feng Chuan ^a   Liu, Yu Tzu ^a,b   Huang, Zhi Quan ^a   Lin, Hsin ^b   Ozolinš, Vidvuds ^c   Bansil, Arun ^d  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c Department of Civil and Environmental Engineering   (United States)

^d NORTHEASTERN UNIVERSITY   (United States)

Author keywords

Bismuth thin films; First principles calculations; Ge(111)

Indexed keywords

ATOMS; CALCULATIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GERMANIUM; MONOLAYERS; OLIGOMERS; SEMICONDUCTOR DOPING; ULTRATHIN FILMS;

BISMUTH THIN FILMS; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; GE(111); INSULATING PHASE; P-TYPE DOPING; STACKING LAYERS; ULTRA-THIN BISMUTH FILMS;

BISMUTH;

EID: 84901744225     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2014.03.024     Document Type: Article

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