Epitaxial growth of Bi thin films on Ge(1 1 1)

Applied Surface Science

Volumn 256, Issue 4, 2009, Pages 1252-1256

  Hatta, Shinichiro ^a,b   Ohtsubo, Yoshiyuki ^a   Miyamoto, Sanae ^a   Okuyama, Hiroshi ^a   Aruga, Tetsuya ^a,b  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Bismuth; Ge(1 1 1); Low energy electron diffraction; Scanning tunneling microscopy; Thin film growth

Indexed keywords

BISMUTH; ELECTRONS; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; THIN FILMS;

BI (1 1 1); BI FILMS; BI THIN FILMS; FILM ORIENTATIONS; LEED PATTERNS; LINE SYMMETRY; LONG RANGE ORDERS; SUBMONOLAYER;

FILM GROWTH;

EID: 70749106428     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.05.079     Document Type: Article

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