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Volumn 605, Issue 19-20, 2011, Pages 1771-1777
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Initial stages of Bi/Ge(111) interface formation: A detailed STM study
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Author keywords
Bismuth; Germanium; Metal semiconductor interfaces; Scanning tunneling microscopy; Single crystal surfaces
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Indexed keywords
ADSORBATE LAYERS;
ATOMIC LAYER;
BI FILMS;
CONTINUOUS FILMS;
INITIAL STAGES;
INTERFACE FORMATION;
LONG RANGE;
LONG RANGE ORDERS;
METAL SEMICONDUCTOR INTERFACE;
STM STUDY;
ULTRA-THIN;
ELECTRONIC PROPERTIES;
GERMANIUM;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTOR GROWTH;
SINGLE CRYSTAL SURFACES;
SINGLE CRYSTALS;
TWO DIMENSIONAL;
BISMUTH;
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EID: 79961021940
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2011.06.004 Document Type: Article |
Times cited : (10)
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References (19)
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