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Volumn 605, Issue 19-20, 2011, Pages 1771-1777

Initial stages of Bi/Ge(111) interface formation: A detailed STM study

Author keywords

Bismuth; Germanium; Metal semiconductor interfaces; Scanning tunneling microscopy; Single crystal surfaces

Indexed keywords

ADSORBATE LAYERS; ATOMIC LAYER; BI FILMS; CONTINUOUS FILMS; INITIAL STAGES; INTERFACE FORMATION; LONG RANGE; LONG RANGE ORDERS; METAL SEMICONDUCTOR INTERFACE; STM STUDY; ULTRA-THIN;

EID: 79961021940     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.06.004     Document Type: Article
Times cited : (10)

References (19)
  • 13
    • 79961030413 scopus 로고    scopus 로고
    • Surf. Sci. 463 2000 55
    • (2000) Surf. Sci. , vol.463 , pp. 55


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.