Advanced plasma etch for the 10nm node and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8685, Issue , 2013, Pages

  Joseph, E A ^a   Engelmann, S U ^a   Miyazoe, H ^a   Bruce, R L ^a   Nakamura, M ^b   Suzuki, T ^b   Hoinkis, M ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Zeon Chemicals LP   (United States)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

193NM IMMERSION LITHOGRAPHY; DEVICE INTEGRATION; HIGH DENSITY PLASMAS; INTERCONNECT INTEGRATION; OXIDATION MECHANISMS; SEMICONDUCTOR INDUSTRY; SIDEWALL IMAGE TRANSFERS; SPLITTING TECHNIQUES;

COPPER; DRY ETCHING; GRAIN BOUNDARIES; NANOTECHNOLOGY; PHOTORESISTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SURFACE SCATTERING;

SILICON NITRIDE;

EID: 84878444885     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.2015189     Document Type: Conference Paper

References (2)

1. S. Engelmann et al., Proc. SPIE 8328 - 9.
2. W. Steinhoegl et al, J. Appl. Phys. 97 (2005) 023706. Proc.