Pattern transfer of directed self-assembly patterns for CMOS device applications

Journal of Micro/Nanolithography, MEMS, and MOEMS

Volumn 12, Issue 4, 2013, Pages

  Tsai, Hsin Yu ^a   Miyazoe, Hiroyuki ^a   Engelmann, Sebastian ^a   Liu, Chi Chun ^b   Gignac, Lynne ^a   Bucchignano, James ^a   Klaus, David ^a   Breslin, Chris ^a   Joseph, Eric ^a   Cheng, Joy ^c   Sanders, Daniel ^c   Guillorn, Michael ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

^c IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

Directed self assembly; fin; gate stack; pattern transfer; Plasma etching; trilayer

Indexed keywords

CMOS INTEGRATED CIRCUITS; LITHOGRAPHY; PLASMA ETCHING; REFRACTORY METAL COMPOUNDS; SILICON NITRIDE;

DIRECTED SELF-ASSEMBLY; FIN; GATE STACKS; PATTERN TRANSFERS; TRI LAYERS;

SELF ASSEMBLY;

EID: 84887842192     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.JMM.12.4.041305     Document Type: Article

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