Shape dependent synthesis and field emission induced rectification in single ZnS nanocrystals

ACS Applied Materials and Interfaces

Volumn 6, Issue 10, 2014, Pages 7856-7863

  Thupakula, Umamahesh ^a   Dalui, Amit ^a   Debangshi, Anupam ^a   Bal, Jayanta K ^a   Kumar, Gundam S ^a   Acharya, Somobrata ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

field emission; rectification; resonant tunneling; scanning tunneling microscopy and spectroscopy; shape dependent ZnS nanocrystals

Indexed keywords

BIAS VOLTAGE; FIELD EMISSION; NANOCRYSTALS; NANORODS; NANOSTRUCTURED MATERIALS; NANOWIRES; RESONANT TUNNELING; SCANNING TUNNELING MICROSCOPY;

CRYSTALLOGRAPHIC PHASE; CURRENT RECTIFICATIONS; ELECTRONIC COMPONENT; FOWLER-NORDHEIM TUNNELING; RECTIFICATION; RECTIFICATION BEHAVIOR; SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY; ZNS NANOCRYSTALS;

ZINC SULFIDE;

EID: 84901660684     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am501165p     Document Type: Article

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