Benefits of oxygen in CuInSe2 and CuGaSe2 containing Se-rich grain boundaries

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 378, Issue 28-29, 2014, Pages 1956-1960

  Feng, Chunbao ^a   Luo, Min ^a   Li, Bolin ^a   Li, Dengfeng ^a   Nie, Jinlan ^b   Dong, Huining ^a  

^a CHONGQING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Density functional theory; Gap states; Grain boundary

Indexed keywords

ATOMS; CHEMICAL BONDS; COPPER COMPOUNDS; DANGLING BONDS; ELECTRONEGATIVITY; GALLIUM COMPOUNDS; GRAIN BOUNDARIES; INDIUM COMPOUNDS; OXYGEN; SELENIUM; VALENCE BANDS;

ANION-ANION INTERACTIONS; ATOMIC SIZES; CUGASE2; GAP STATE; LATTICE RELAXATION; LOWER ENERGIES; NON-RADIATIVE RECOMBINATIONS; STRONG INTERACTION;

DENSITY FUNCTIONAL THEORY;

EID: 84901608526     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2014.03.057     Document Type: Article

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