Room temperature fabrication of silicon nanocrystals by pulsed laser deposition

Journal of Nanoparticle Research

Volumn 16, Issue 6, 2014, Pages

  Biserni, Erika ^a,b   Scarpellini, Alice ^a   Brescia, Rosaria ^a   Dellasega, David ^b   Li Bassi, Andrea ^a,b   Bruno, Paola ^a  

^a ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Porous silicon; Pulsed laser deposition; Raman spectroscopy; Silicon nanocrystals; Silicon quantum dots; Transmission electron microscopy

Indexed keywords

ARGON; DEPOSITION; GASES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; KINETICS; MIXTURES; NANOCRYSTALS; OPTICAL WAVEGUIDES; POROUS SILICON; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; SILICON; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

CLUSTER NUCLEATION; CORE-SHELL NANOSTRUCTURES; DEPOSITION KINETICS; HIGH-PRESSURE PROCESSING; NANOSTRUCTURED FILMS; PHYSICAL VAPOUR DEPOSITION; SILICON NANOCRYSTALS; SILICON QUANTUM DOTS;

AMORPHOUS SILICON;

ARGON; NANOCRYSTAL; NANOFILM; NANOMATERIAL; SILICON;

ARTICLE; ATMOSPHERIC DEPOSITION; CONTROLLED STUDY; ELECTRON DIFFRACTION; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY; NANOFABRICATION; PRIORITY JOURNAL; PULSED LASER DEPOSITION; RAMAN SPECTROMETRY; ROOM TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 84901583466     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-014-2461-8     Document Type: Article

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