Study of silicon quantum dot p-n or p-i-n junction devices on c-Si substrate

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn , Issue , 2008, Pages 316-319

  Park, Sangwook ^a   Cho, Eunchel ^b   Hao, Xiaojing ^a   Conibeer, Gavin ^a   Green, Martin A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b Applied Technology Research Department   (South Korea)

Author keywords

Component; Silicon quantum dot; Tandem; Third generation

Indexed keywords

BAND GAPS; BOHR RADIUS; BULK CRYSTALLINE; COMPONENT; CONDUCTION MECHANISMS; CRYSTALLINE SILICON WAFERS; ELECTRICAL PROPERTIES; HOMO JUNCTIONS; MATERIAL PROPERTIES; P-I-N JUNCTIONS; QUANTUM DOT SUPERLATTICES; SI SUBSTRATES; SILICON QUANTUM DOTS; SILICON-BASED; SOLAR CELL PERFORMANCE; SOLAR SPECTRUM; TANDEM; TANDEM CELLS; TANDEM SOLAR CELLS; TEMPERATURE DEPENDENCES; THIRD GENERATION;

CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; NONMETALS; OPTICAL WAVEGUIDES; PHOTOVOLTAIC CELLS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SOLAR CELLS;

SILICON WAFERS;

EID: 64849102183     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2008.4802155     Document Type: Conference Paper

References (8)

1. M. A. Green, "Third Generation Photovoltaics: Advanced Solar Energy Conversion", Springer-Verlag, 2003.
2. M. A. Green, E.-C. Cho, Y. Cho, et al., "All-silicon tandem cells based on "artificial" semiconductor synthesised using silicon quantumdots in a dielectric matrix," in Proceedings of the 20th European Photovoltaic Solar Energy Conference and Exhibition, p. 3, Barcelona, Spain, June 2005.
3. E.-C. Cho, M. A. Green, J. Xia, R. Corkish, P. Reece, and M. Gal, "Clear quantum-confined luminescence from crystalline silicon/SiO2 single quantum wells," Applied Physics Letters, vol. 84, no. 13, pp. 2286-2288, 2004
4. Sangwook Park, Eunchel Cho, Dengyuan Song, Gavin Conibeer and Martin A. Green, "Electrical properties of n-type Silicon quantum dots and P-type crystalline silicon heterojunction devices", International PVSEC17, Fukuoka, Japan, December 2007.
5. G. Faraci, S. Gibilisco, P. Russo, A. R. Pennisi, G. Compagnini, S. Battiato, R. Puglisi, S. La Rosa, "Modified Raman confinement model for Si nanocrystals", Eur. Phys. J. B 46 p. 457., 2005
6. S. Vepřek, FA Sarott, and Z. Iqbal, "Effect of grain boundaries on the Raman spectra, optical absorption, and elastic light scattering in nanometer-sized crystalline silicon," Phys. Rev. B 36, 3344, 1987.
7. R.L. Anderson, "Experiments on Ge-GaAs heterojunctions", Solid-State Electron 5, p. 341., 1962
8. Mittiga A, Fiorini P, Falconieri M and Evangelisti F, "Dark J-V characteristic of p-i-n a-Si: H solar cells" J. Appl. Phys. 66 2667, 1989