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Volumn 2, Issue , 2006, Pages 1443-1448

Interface structure in a-Si:H/c-Si heterojunction solar cells characterized by optical diagnosis technique

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; HETEROJUNCTIONS; OPTICAL SYSTEMS; SPECTROSCOPIC ELLIPSOMETRY;

EID: 41749087796     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279724     Document Type: Conference Paper
Times cited : (15)

References (8)
  • 2
    • 0026943048 scopus 로고
    • Development of New a-Si:H/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)
    • M. Tanaka, M. Taguchi, T. Matsuyama, T. Sawada, S. Tsuda, S. Nakano, H. Hanafusa, and Y. Kuwano, "Development of New a-Si:H/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)", Jpn. J. Appl. Phys. 31, 1992, pp. 3518-3522.
    • (1992) Jpn. J. Appl. Phys , vol.31 , pp. 3518-3522
    • Tanaka, M.1    Taguchi, M.2    Matsuyama, T.3    Sawada, T.4    Tsuda, S.5    Nakano, S.6    Hanafusa, H.7    Kuwano, Y.8
  • 3
    • 17044426716 scopus 로고    scopus 로고
    • H. Fujiwara and M. Kondo, Real-time monitoring and process control in amorphous/crystalline silicon heterojunction solar cells by spectroscopic ellipsometry and infrared spectroscopy, Appl. Phys. Lett. 86, 2005, pp. 032112-1-3.
    • H. Fujiwara and M. Kondo, "Real-time monitoring and process control in amorphous/crystalline silicon heterojunction solar cells by spectroscopic ellipsometry and infrared spectroscopy", Appl. Phys. Lett. 86, 2005, pp. 032112-1-3.
  • 4
    • 0001642363 scopus 로고    scopus 로고
    • Assessment of Effective-Medium Theories in the Analysis of Nucleation and Microscopic Surface Roughness Evolution for Semiconductor Thin Films
    • H. Fujiwara, J. Koh, P. I. Rovira, and R. W. Collins, "Assessment of Effective-Medium Theories in the Analysis of Nucleation and Microscopic Surface Roughness Evolution for Semiconductor Thin Films", Phys. Rev. B 61, 2000, pp. 10832-10844.
    • (2000) Phys. Rev. B , vol.61 , pp. 10832-10844
    • Fujiwara, H.1    Koh, J.2    Rovira, P.I.3    Collins, R.W.4
  • 6
    • 0037463288 scopus 로고    scopus 로고
    • Real-time characterization of free-carrier absorption during epitaxial Si p-layer growth
    • H. Fujiwara, M. Kondo, and A. Matsuda, "Real-time characterization of free-carrier absorption during epitaxial Si p-layer growth", Appl. Phys. Lett. 82, 2003, pp. 1227-1229.
    • (2003) Appl. Phys. Lett , vol.82 , pp. 1227-1229
    • Fujiwara, H.1    Kondo, M.2    Matsuda, A.3
  • 7
    • 0002524075 scopus 로고    scopus 로고
    • In situ observation of low temperature growth of crystalline silicon using reflection high-energy electron diffraction
    • T. Kitagawa, M. Kondo, and A. Matsuda, "In situ observation of low temperature growth of crystalline silicon using reflection high-energy electron diffraction", J. Non-Cryst. Solids 266-269, 2000, pp. 64-68.
    • (2000) J. Non-Cryst. Solids , vol.266-269 , pp. 64-68
    • Kitagawa, T.1    Kondo, M.2    Matsuda, A.3
  • 8
    • 0032000593 scopus 로고    scopus 로고
    • Real time spectroscopic ellipsometry for characterization of the crystallization of amorphous silicon by thermal annealing
    • M. Wakagi, H. Fujiwara, and R. W. Collins, "Real time spectroscopic ellipsometry for characterization of the crystallization of amorphous silicon by thermal annealing", Thin Solid Films 313-314, 1998, pp. 464-468.
    • (1998) Thin Solid Films , vol.313-314 , pp. 464-468
    • Wakagi, M.1    Fujiwara, H.2    Collins, R.W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.