Built-in enhancement in a-Si:H solar cell by chromium silicide layer

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 689-691

  Caputo, Domenico ^a   De Cesare, Giampiero ^a   Tucci, Mario ^b  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b ENEA   (Italy)

Author keywords

Amorphous film; p i n photodiodes; solar cell

Indexed keywords

A-SI:H; BUILT-IN POTENTIAL; CHROMIUM FILM; CHROMIUM SILICIDES; DOPED LAYERS; METAL ELECTRODES; P-I-N PHOTODIODES; PHOTOVOLTAIC PERFORMANCE; PIN PHOTODIODE;

ACTIVATION ENERGY; AMORPHOUS SILICON; CHROMIUM; OPEN CIRCUIT VOLTAGE; PHOSPHORUS; PHOTODIODES; SECONDARY BATTERIES; SILICIDES; SOLAR CELLS; SOLAR ENERGY; SOLAR POWER GENERATION;

AMORPHOUS FILMS;

EID: 77954144350     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2047233     Document Type: Article

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